Characterization of Mg0.20Zn0.80O metal-semiconductor-metal photodetectors

	Characterization of Mg0.20Zn0.80O metal-semiconductor-metal photodetectors
其他题名	论文其他题名
	Jiang D. Y.; Zhang X. Y.; Liu Q. S.; Bai Z. H.; Lu L. P.; Wang X. C.; Mi X. Y.; Wang N. L.; Shen D. Z.
	2010
发表期刊	Materials Science and Engineering B-Advanced Functional Solid-State Materials
ISSN	0921-5107
卷号	175 期号:1 页码:41-43
摘要	Mg0 20Zn0 80O films have been prepared on quartz substrates by using radio frequency (RF) magnetron sputtering, and metal-semiconductor-metal (MSM) structured photodetectors have been fabricated on the Mg-0 20Zn0 80O films employing interdigital Au as metal contacts We have investigated the effects of electrode spacings on the properties of Mg0 20Zn0 O-80 MSM photodetectors It was shown that both of dark currents and responsivities of the devices will decrease with the increasing electrode spacing at the same bias It was thought that the resistance and the depletion region between the electrodes play important roles in the devices, and the physical mechanism can be explained by a straightforward qualitative model Published by Elsevier B.V
收录类别	SCI ; EI
语种	英语
文献类型	期刊论文
条目标识符	http://ir.ciomp.ac.cn/handle/181722/26151
专题	中科院长春光机所知识产出
推荐引用方式 GB/T 7714	Jiang D. Y.,Zhang X. Y.,Liu Q. S.,et al. Characterization of Mg0.20Zn0.80O metal-semiconductor-metal photodetectors[J]. Materials Science and Engineering B-Advanced Functional Solid-State Materials,2010,175(1):41-43.
APA	Jiang D. Y..,Zhang X. Y..,Liu Q. S..,Bai Z. H..,Lu L. P..,...&Shen D. Z..(2010).Characterization of Mg0.20Zn0.80O metal-semiconductor-metal photodetectors.Materials Science and Engineering B-Advanced Functional Solid-State Materials,175(1),41-43.
MLA	Jiang D. Y.,et al."Characterization of Mg0.20Zn0.80O metal-semiconductor-metal photodetectors".Materials Science and Engineering B-Advanced Functional Solid-State Materials 175.1(2010):41-43.

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