Changchun Institute of Optics,Fine Mechanics and Physics,CAS
An approach to enhanced acceptor concentration in ZnO:N films | |
其他题名 | 论文其他题名 |
Li L.; Shan C. X.; Li B. H.; Zhang J. Y.; Yao B.; Shen D. Z.; Fan X. W.; Lu Y. M. | |
2010 | |
发表期刊 | Journal of Materials Science |
ISSN | 0022-2461 |
卷号 | 45期号:15页码:4093-4096 |
摘要 | Owing to the low doping concentration of nitrogen and strong compensation of intrinsic donors, the attainment of highly conductive p-type ZnO films remains one of the largest challenges for the application of ZnO. An approach has been proposed to increase the doping concentration of nitrogen in ZnO by exposing the ZnO:N films in the ambient of nitrogen plasma periodically in this paper. Hall measurements and photoluminescence spectroscopy indicate that this approach is effective in improving the hole concentration in ZnO films. Under the optimized conditions, a p-type ZnO film with a hole concentration of 1.68 x 10(18) cm(-3) has been achieved. |
收录类别 | SCI ; EI |
语种 | 英语 |
文献类型 | 期刊论文 |
条目标识符 | http://ir.ciomp.ac.cn/handle/181722/26147 |
专题 | 中科院长春光机所知识产出 |
推荐引用方式 GB/T 7714 | Li L.,Shan C. X.,Li B. H.,et al. An approach to enhanced acceptor concentration in ZnO:N films[J]. Journal of Materials Science,2010,45(15):4093-4096. |
APA | Li L..,Shan C. X..,Li B. H..,Zhang J. Y..,Yao B..,...&Lu Y. M..(2010).An approach to enhanced acceptor concentration in ZnO:N films.Journal of Materials Science,45(15),4093-4096. |
MLA | Li L.,et al."An approach to enhanced acceptor concentration in ZnO:N films".Journal of Materials Science 45.15(2010):4093-4096. |
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