A route to improved extraction efficiency of light-emitting diodes

	A route to improved extraction efficiency of light-emitting diodes
其他题名	论文其他题名
	Zhu H.; Shan C. X.; Wang L. K.; Yang Y.; Zhang J. Y.; Yao B.; Shen D. Z.; Fan X. W.
	2010
发表期刊	Applied Physics Letters
ISSN	0003-6951
卷号	96 期号:4
摘要	The electroluminescence from an n-MgZnO/i-ZnO/MgO/p-GaN asymmetric double heterojunction has been demonstrated. With the injection of electrons from n-MgZnO and holes from p-GaN, an intense ultraviolet emission coming from the ZnO active layer was observed. It is revealed that the emission intensity of the diode recorded from the MgZnO side is significantly larger than that from the MgO side because of the asymmetric waveguide structure formed by the lower refractive index of MgO than that of MgZnO. The asymmetric waveguide structure reported in this letter may promise a simple and effective route to light-emitting diodes with improved light-extraction efficiency.
收录类别	SCI ; EI
语种	英语
文献类型	期刊论文
条目标识符	http://ir.ciomp.ac.cn/handle/181722/26132
专题	中科院长春光机所知识产出
推荐引用方式 GB/T 7714	Zhu H.,Shan C. X.,Wang L. K.,et al. A route to improved extraction efficiency of light-emitting diodes[J]. Applied Physics Letters,2010,96(4).
APA	Zhu H..,Shan C. X..,Wang L. K..,Yang Y..,Zhang J. Y..,...&Fan X. W..(2010).A route to improved extraction efficiency of light-emitting diodes.Applied Physics Letters,96(4).
MLA	Zhu H.,et al."A route to improved extraction efficiency of light-emitting diodes".Applied Physics Letters 96.4(2010).

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