Electrically Pumped Single-Mode Lasing Emission of Self-Assembled n-ZnO Microcrystalline Film/p-GaN Heterojunction Diode

	Electrically Pumped Single-Mode Lasing Emission of Self-Assembled n-ZnO Microcrystalline Film/p-GaN Heterojunction Diode
其他题名	论文其他题名
	Guo Z.; Zhao D. X.; Liu Y. C.; Shen D. Z.; Yao B.; Zhang Z. Z.; Li B. H.
	2010
发表期刊	Journal of Physical Chemistry C
ISSN	1932-7447
卷号	114 期号:36 页码:15499-15503
摘要	The self-assembled ZnO microcrystalline film was synthesized through repeated growth by a low-temperature hydrothermal method using p-GaN wafer as a template. Well-defined peaks with 6-fold symmetry in the XRD phi-scan indicated the repeated grown ZnO microcrystal following an orientation relationship of [103](ZnO)(parallel to)[103](GaN). Room temperature photoluminescence (RT PL) spectra indicated that self-assembled ZnO owned a strong ultraviolet (UV) emission accompanied by a weak defects-related emission. The electrically pumped single-mode lasing emission located at 407 nm with a full width at half-maximum (fwhm) of 0.7 nm was observed based on the self-assembled n-ZnO microcrystalline film/p-GaN heterojunction diode.
收录类别	SCI ; EI
语种	英语
文献类型	期刊论文
条目标识符	http://ir.ciomp.ac.cn/handle/181722/26126
专题	中科院长春光机所知识产出
推荐引用方式 GB/T 7714	Guo Z.,Zhao D. X.,Liu Y. C.,et al. Electrically Pumped Single-Mode Lasing Emission of Self-Assembled n-ZnO Microcrystalline Film/p-GaN Heterojunction Diode[J]. Journal of Physical Chemistry C,2010,114(36):15499-15503.
APA	Guo Z..,Zhao D. X..,Liu Y. C..,Shen D. Z..,Yao B..,...&Li B. H..(2010).Electrically Pumped Single-Mode Lasing Emission of Self-Assembled n-ZnO Microcrystalline Film/p-GaN Heterojunction Diode.Journal of Physical Chemistry C,114(36),15499-15503.
MLA	Guo Z.,et al."Electrically Pumped Single-Mode Lasing Emission of Self-Assembled n-ZnO Microcrystalline Film/p-GaN Heterojunction Diode".Journal of Physical Chemistry C 114.36(2010):15499-15503.

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