Metal-insulator-semiconductor-insulator-metal structured titanium dioxide ultraviolet photodetector

	Metal-insulator-semiconductor-insulator-metal structured titanium dioxide ultraviolet photodetector
其他题名	论文其他题名
	Wang W. J.; Shan C. X.; Zhu H.; Ma F. Y.; Shen D. Z.; Fan X. W.; Choy K. L.
	2010
发表期刊	Journal of Physics D-Applied Physics
ISSN	0022-3727
卷号	43 期号:4
摘要	Titanium dioxide (TiO(2)) thin films were prepared by an atomic layer deposition technique and a metal-insulator-semiconductor-insulator-metal structured ultraviolet photodetector was fabricated from the TiO(2) thin films. Meanwhile, a metal-semiconductor-metal structured photodetector was also fabricated under the same condition for comparison. By measuring their photoresponse properties, it was found that the existence of an insulation layer is effective in improving the photodetector's responsivity. The mechanism for the improvement has been attributed to the carrier multiplication occurring in the insulation layer under a high electric field.
收录类别	SCI ; EI
语种	英语
文献类型	期刊论文
条目标识符	http://ir.ciomp.ac.cn/handle/181722/26119
专题	中科院长春光机所知识产出
推荐引用方式 GB/T 7714	Wang W. J.,Shan C. X.,Zhu H.,et al. Metal-insulator-semiconductor-insulator-metal structured titanium dioxide ultraviolet photodetector[J]. Journal of Physics D-Applied Physics,2010,43(4).
APA	Wang W. J..,Shan C. X..,Zhu H..,Ma F. Y..,Shen D. Z..,...&Choy K. L..(2010).Metal-insulator-semiconductor-insulator-metal structured titanium dioxide ultraviolet photodetector.Journal of Physics D-Applied Physics,43(4).
MLA	Wang W. J.,et al."Metal-insulator-semiconductor-insulator-metal structured titanium dioxide ultraviolet photodetector".Journal of Physics D-Applied Physics 43.4(2010).

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