Changchun Institute of Optics,Fine Mechanics and Physics,CAS
Improved ultraviolet/visible rejection ratio using MgZnO/SiO2/n-Si heterojunction photodetectors | |
其他题名 | 论文其他题名 |
Jiang D. Y.; Zhang X. Y.; Liu Q. S.; Bai Z. H.; Lu L. P.; Wang X. C.; Mi X. Y.; Wang N. L.; Shen D. Z. | |
2010 | |
发表期刊 | Applied Surface Science
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ISSN | 0169-4332 |
卷号 | 256期号:21页码:6153-6156 |
摘要 | We report on the fabrication and characterization of MgZnO/SiO2/n-Si structured photodetectors, for the visible-blind monitoring. The current-voltage curve of the heterojunction shows obvious rectifying behaviors. In the visible range, the photocurrent decreased rapidly. In additionally, the ultraviolet/visible rejection ratio (R340 nm/R500 nm) was about four orders of magnitude at reverse bias, indicating a high degree of visible blindness. The key role of the insulating SiO2 layer will be discussed in terms of the band diagrams of the heterojunctions. Published by Elsevier B.V. |
收录类别 | SCI ; EI |
语种 | 英语 |
文献类型 | 期刊论文 |
条目标识符 | http://ir.ciomp.ac.cn/handle/181722/26104 |
专题 | 中科院长春光机所知识产出 |
推荐引用方式 GB/T 7714 | Jiang D. Y.,Zhang X. Y.,Liu Q. S.,et al. Improved ultraviolet/visible rejection ratio using MgZnO/SiO2/n-Si heterojunction photodetectors[J]. Applied Surface Science,2010,256(21):6153-6156. |
APA | Jiang D. Y..,Zhang X. Y..,Liu Q. S..,Bai Z. H..,Lu L. P..,...&Shen D. Z..(2010).Improved ultraviolet/visible rejection ratio using MgZnO/SiO2/n-Si heterojunction photodetectors.Applied Surface Science,256(21),6153-6156. |
MLA | Jiang D. Y.,et al."Improved ultraviolet/visible rejection ratio using MgZnO/SiO2/n-Si heterojunction photodetectors".Applied Surface Science 256.21(2010):6153-6156. |
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