Determination of InN/Diamond Heterojunction Band Offset by X-ray Photoelectron Spectroscopy

	Determination of InN/Diamond Heterojunction Band Offset by X-ray Photoelectron Spectroscopy
其他题名	论文其他题名
	Shi K.; Li D. B.; Song H. P.; Guo Y.; Wang J.; Xu X. Q.; Liu J. M.; Yang A. L.; Wei H. Y.; Zhang B.; Yang S. Y.; Liu X. L.; Zhu Q. S.; Wang Z. G.
	2011
发表期刊	Nanoscale Research Letters
ISSN	1931-7573
卷号	6
摘要	Diamond is not only a free standing highly transparent window but also a promising carrier confinement layer for InN based devices, yet little is known of the band offsets in InN/diamond system. X-ray photoelectron spectroscopy was used to measure the energy discontinuity in the valence band offset (VBO) of InN/diamond heterostructure. The value of VBO was determined to be 0.39 +/- 0.08 eV and a type-I heterojunction with a conduction band offset (CBO) of 4.42 +/- 0.08 eV was obtained. The accurate determination of VBO and CBO is important for the application of III-N alloys based electronic devices.
收录类别	SCI ; EI
语种	英语
WOS记录号	BMC:10.1007/s11671-010-9796-6
引用统计
文献类型	期刊论文
条目标识符	http://ir.ciomp.ac.cn/handle/181722/26085
专题	中科院长春光机所知识产出
推荐引用方式 GB/T 7714	Shi K.,Li D. B.,Song H. P.,et al. Determination of InN/Diamond Heterojunction Band Offset by X-ray Photoelectron Spectroscopy[J]. Nanoscale Research Letters,2011,6.
APA	Shi K..,Li D. B..,Song H. P..,Guo Y..,Wang J..,...&Wang Z. G..(2011).Determination of InN/Diamond Heterojunction Band Offset by X-ray Photoelectron Spectroscopy.Nanoscale Research Letters,6.
MLA	Shi K.,et al."Determination of InN/Diamond Heterojunction Band Offset by X-ray Photoelectron Spectroscopy".Nanoscale Research Letters 6(2011).

条目包含的文件		下载所有文件
文件名称/大小	文献类型	版本类型	开放类型	使用许可
Shi-2011-Determinati（343KB）			开放获取	--	浏览下载