Changchun Institute of Optics,Fine Mechanics and Physics,CAS
Ultraviolet photodetectors with MgZnO nanowall networks grown by molecular beam epitaxy on Si(111) substrates | |
其他题名 | 论文其他题名 |
Jiang D. Y.; Qin J. M.; Zhang X. Y.; Bai Z. H.; Shen D. Z. | |
2011 | |
发表期刊 | Materials Science and Engineering B-Advanced Functional Solid-State Materials
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ISSN | 0921-5107 |
卷号 | 176期号:9页码:736-739 |
摘要 | Mg(0.05)Zn(0.95)O nanowall networks ultraviolet (UV) photodetector was fabricated on Si(1 1 1) by plasma-assisted molecular beam epitaxy. Based on the Mg(0.05)Zn(0.95)O nanowall networks, planar geometry photoconductive type metal-semiconductor-metal photodetector was fabricated. At 5 V bias, the peak responsivity of 24.65 A/W was achieved at 352 nm, corresponding to an external quantum efficiency of similar to 8490%. Such high external quantum efficiency was attributed to the photoconductive gain, which can be explained by the presence of oxygen-related hole-trap states at the nanowall surface. The response time of 25 ms was determined by the measurements of photocurrent versus modulation frequency. Published by Elsevier B.V. |
收录类别 | SCI ; EI |
语种 | 英语 |
文献类型 | 期刊论文 |
条目标识符 | http://ir.ciomp.ac.cn/handle/181722/26068 |
专题 | 中科院长春光机所知识产出 |
推荐引用方式 GB/T 7714 | Jiang D. Y.,Qin J. M.,Zhang X. Y.,et al. Ultraviolet photodetectors with MgZnO nanowall networks grown by molecular beam epitaxy on Si(111) substrates[J]. Materials Science and Engineering B-Advanced Functional Solid-State Materials,2011,176(9):736-739. |
APA | Jiang D. Y.,Qin J. M.,Zhang X. Y.,Bai Z. H.,&Shen D. Z..(2011).Ultraviolet photodetectors with MgZnO nanowall networks grown by molecular beam epitaxy on Si(111) substrates.Materials Science and Engineering B-Advanced Functional Solid-State Materials,176(9),736-739. |
MLA | Jiang D. Y.,et al."Ultraviolet photodetectors with MgZnO nanowall networks grown by molecular beam epitaxy on Si(111) substrates".Materials Science and Engineering B-Advanced Functional Solid-State Materials 176.9(2011):736-739. |
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