Ultraviolet photodetectors with MgZnO nanowall networks grown by molecular beam epitaxy on Si(111) substrates

	Ultraviolet photodetectors with MgZnO nanowall networks grown by molecular beam epitaxy on Si(111) substrates
其他题名	论文其他题名
	Jiang D. Y.; Qin J. M.; Zhang X. Y.; Bai Z. H.; Shen D. Z.
	2011
发表期刊	Materials Science and Engineering B-Advanced Functional Solid-State Materials
ISSN	0921-5107
卷号	176 期号:9 页码:736-739
摘要	Mg(0.05)Zn(0.95)O nanowall networks ultraviolet (UV) photodetector was fabricated on Si(1 1 1) by plasma-assisted molecular beam epitaxy. Based on the Mg(0.05)Zn(0.95)O nanowall networks, planar geometry photoconductive type metal-semiconductor-metal photodetector was fabricated. At 5 V bias, the peak responsivity of 24.65 A/W was achieved at 352 nm, corresponding to an external quantum efficiency of similar to 8490%. Such high external quantum efficiency was attributed to the photoconductive gain, which can be explained by the presence of oxygen-related hole-trap states at the nanowall surface. The response time of 25 ms was determined by the measurements of photocurrent versus modulation frequency. Published by Elsevier B.V.
收录类别	SCI ; EI
语种	英语
文献类型	期刊论文
条目标识符	http://ir.ciomp.ac.cn/handle/181722/26068
专题	中科院长春光机所知识产出
推荐引用方式 GB/T 7714	Jiang D. Y.,Qin J. M.,Zhang X. Y.,et al. Ultraviolet photodetectors with MgZnO nanowall networks grown by molecular beam epitaxy on Si(111) substrates[J]. Materials Science and Engineering B-Advanced Functional Solid-State Materials,2011,176(9):736-739.
APA	Jiang D. Y.,Qin J. M.,Zhang X. Y.,Bai Z. H.,&Shen D. Z..(2011).Ultraviolet photodetectors with MgZnO nanowall networks grown by molecular beam epitaxy on Si(111) substrates.Materials Science and Engineering B-Advanced Functional Solid-State Materials,176(9),736-739.
MLA	Jiang D. Y.,et al."Ultraviolet photodetectors with MgZnO nanowall networks grown by molecular beam epitaxy on Si(111) substrates".Materials Science and Engineering B-Advanced Functional Solid-State Materials 176.9(2011):736-739.

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