Design and comparison of GaAs, GaAsP and InGaAlAs quantum-well active regions for 808-nm VCSELs

	Design and comparison of GaAs, GaAsP and InGaAlAs quantum-well active regions for 808-nm VCSELs
其他题名	论文其他题名
	Zhang Y.; Ning Y. Q.; Zhang L. S.; Zhang J. S.; Zhang J. W.; Wang Z. F.; Zhang J.; Zeng Y. G.; Wang L. J.
	2011
发表期刊	Optics Express
ISSN	1094-4087
卷号	19 期号:13 页码:12569-12581
摘要	Vertical-cavity surface-emitting lasers emitting at 808 nm with unstrained GaAs/Al0.3Ga0.7As, tensilely strained GaAsxP1-x/Al0.3Ga0.7As and compressively strained In1-x-yGaxAlyAs/Al0.3Ga0.7As quantum-well active regions have been investigated. A comprehensive model is presented to determine the composition and width of these quantum wells. The numerical simulation shows that the gain peak wavelength is near 800 nm at room temperature for GaAs well with width of 4 nm, GaAs0.87P0.13 well with width of 13 nm and In0.14Ga0.74Al0.12As well with width of 6 nm. Furthermore, the output characteristics of the three designed quantum-well VCSELs are studied and compared. The results indicate that In0.14Ga0.74Al0.12As is the most appropriate candidate for the quantum well of 808-nm VCSELs. (C)2011 Optical Society of America
收录类别	SCI ; EI
语种	英语
文献类型	期刊论文
条目标识符	http://ir.ciomp.ac.cn/handle/181722/26046
专题	中科院长春光机所知识产出
推荐引用方式 GB/T 7714	Zhang Y.,Ning Y. Q.,Zhang L. S.,et al. Design and comparison of GaAs, GaAsP and InGaAlAs quantum-well active regions for 808-nm VCSELs[J]. Optics Express,2011,19(13):12569-12581.
APA	Zhang Y..,Ning Y. Q..,Zhang L. S..,Zhang J. S..,Zhang J. W..,...&Wang L. J..(2011).Design and comparison of GaAs, GaAsP and InGaAlAs quantum-well active regions for 808-nm VCSELs.Optics Express,19(13),12569-12581.
MLA	Zhang Y.,et al."Design and comparison of GaAs, GaAsP and InGaAlAs quantum-well active regions for 808-nm VCSELs".Optics Express 19.13(2011):12569-12581.

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