Changchun Institute of Optics,Fine Mechanics and Physics,CAS
Design and comparison of GaAs, GaAsP and InGaAlAs quantum-well active regions for 808-nm VCSELs | |
其他题名 | 论文其他题名 |
Zhang Y.; Ning Y. Q.; Zhang L. S.; Zhang J. S.; Zhang J. W.; Wang Z. F.; Zhang J.; Zeng Y. G.; Wang L. J. | |
2011 | |
发表期刊 | Optics Express |
ISSN | 1094-4087 |
卷号 | 19期号:13页码:12569-12581 |
摘要 | Vertical-cavity surface-emitting lasers emitting at 808 nm with unstrained GaAs/Al0.3Ga0.7As, tensilely strained GaAsxP1-x/Al0.3Ga0.7As and compressively strained In1-x-yGaxAlyAs/Al0.3Ga0.7As quantum-well active regions have been investigated. A comprehensive model is presented to determine the composition and width of these quantum wells. The numerical simulation shows that the gain peak wavelength is near 800 nm at room temperature for GaAs well with width of 4 nm, GaAs0.87P0.13 well with width of 13 nm and In0.14Ga0.74Al0.12As well with width of 6 nm. Furthermore, the output characteristics of the three designed quantum-well VCSELs are studied and compared. The results indicate that In0.14Ga0.74Al0.12As is the most appropriate candidate for the quantum well of 808-nm VCSELs. (C)2011 Optical Society of America |
收录类别 | SCI ; EI |
语种 | 英语 |
文献类型 | 期刊论文 |
条目标识符 | http://ir.ciomp.ac.cn/handle/181722/26046 |
专题 | 中科院长春光机所知识产出 |
推荐引用方式 GB/T 7714 | Zhang Y.,Ning Y. Q.,Zhang L. S.,et al. Design and comparison of GaAs, GaAsP and InGaAlAs quantum-well active regions for 808-nm VCSELs[J]. Optics Express,2011,19(13):12569-12581. |
APA | Zhang Y..,Ning Y. Q..,Zhang L. S..,Zhang J. S..,Zhang J. W..,...&Wang L. J..(2011).Design and comparison of GaAs, GaAsP and InGaAlAs quantum-well active regions for 808-nm VCSELs.Optics Express,19(13),12569-12581. |
MLA | Zhang Y.,et al."Design and comparison of GaAs, GaAsP and InGaAlAs quantum-well active regions for 808-nm VCSELs".Optics Express 19.13(2011):12569-12581. |
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