The formation mechanism of self-assembled CdSe quantum dots

	The formation mechanism of self-assembled CdSe quantum dots
其他题名	论文其他题名
	Yang Y.; Shen D. Z.; Zhang J. Y.; Fan X. W.; Li B. S.; Lu Y. M.; Liu Y. C.; Liu Y. N.
	2001
发表期刊	Journal of Crystal Growth
ISSN	0022-0248
卷号	233 期号:4 页码:785-790
摘要	The formation process of CdSe self-assembled quantum dots (SAQDs) was investigated systematically by atomic force microscopy (AFM). Several monolayers (MLs) of CdSe coverage were grown directly on GaAs substrates by metalorganic chemical vapor deposition (MOCVD). AFM images were taken constantly on the same area within several hours after the growth. It revealed that the relaxation of misfit strain is completed by two competing processes. One is the formation of quantum dots assisted by surface diffusions another is the formation of misfit dislocations. (C) 2001 Elsevier Science B.V. All rights reserved.
收录类别	SCI ; EI
语种	英语
文献类型	期刊论文
条目标识符	http://ir.ciomp.ac.cn/handle/181722/26022
专题	中科院长春光机所知识产出
推荐引用方式 GB/T 7714	Yang Y.,Shen D. Z.,Zhang J. Y.,et al. The formation mechanism of self-assembled CdSe quantum dots[J]. Journal of Crystal Growth,2001,233(4):785-790.
APA	Yang Y..,Shen D. Z..,Zhang J. Y..,Fan X. W..,Li B. S..,...&Liu Y. N..(2001).The formation mechanism of self-assembled CdSe quantum dots.Journal of Crystal Growth,233(4),785-790.
MLA	Yang Y.,et al."The formation mechanism of self-assembled CdSe quantum dots".Journal of Crystal Growth 233.4(2001):785-790.

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