Growth and characterization of ZnCdTe-ZnTe quantum wells on ZnO coated Si substrate by metalorganic chemical vapor deposition

	Growth and characterization of ZnCdTe-ZnTe quantum wells on ZnO coated Si substrate by metalorganic chemical vapor deposition
其他题名	论文其他题名
	Shan C. X.; Fan X. W.; Zhang J. Y.; Zhang Z. Z.; Ma J. G.; Lu Y. M.; Liu Y. C.; Shen D. Z.
	2001
发表期刊	Journal of Crystal Growth
ISSN	0022-0248
卷号	233 期号:4 页码:795-798
摘要	ZnCdTe-ZnTe quantum wells (QWs) have been grown on Si (1 0 0) substrates in a horizontal-type low-pressure metalorganic chemical vapor deposition (MOCVD) system. An oriented ZnO thin film with a smooth surface was employed to be the bufferlayer for the growth. Scanning electron microscopy (SEM) patterns showed that the ZnO bufferlayer improved the smoothness of the sample. The photoluminescence (PL) spectra of the QWs with and without ZnO layer were studied. The great enhancement of the emission efficiency of the one with ZnO layer indicated that the quality of the epilayer was improved. (C) 2001 Elsevier Science B.V. All rights reserved.
收录类别	SCI ; EI
语种	英语
文献类型	期刊论文
条目标识符	http://ir.ciomp.ac.cn/handle/181722/26018
专题	中科院长春光机所知识产出
推荐引用方式 GB/T 7714	Shan C. X.,Fan X. W.,Zhang J. Y.,et al. Growth and characterization of ZnCdTe-ZnTe quantum wells on ZnO coated Si substrate by metalorganic chemical vapor deposition[J]. Journal of Crystal Growth,2001,233(4):795-798.
APA	Shan C. X..,Fan X. W..,Zhang J. Y..,Zhang Z. Z..,Ma J. G..,...&Shen D. Z..(2001).Growth and characterization of ZnCdTe-ZnTe quantum wells on ZnO coated Si substrate by metalorganic chemical vapor deposition.Journal of Crystal Growth,233(4),795-798.
MLA	Shan C. X.,et al."Growth and characterization of ZnCdTe-ZnTe quantum wells on ZnO coated Si substrate by metalorganic chemical vapor deposition".Journal of Crystal Growth 233.4(2001):795-798.

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