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Effect of the growth temperature on ZnO thin films grown by plasma enhanced chemical vapor deposition
其他题名论文其他题名
Li B. S.; Liu Y. C.; Zhi Z. Z.; Shen D. Z.; Lu Y. M.; Zhang J. Y.; Kong X. G.; Fan X. W.
2002
发表期刊Thin Solid Films
ISSN0040-6090
卷号414期号:2页码:170-174
摘要A preferred oriented (0 0 2) ZnO thin films have been grown on Si (10 0) substrate via plasma enhanced chemical vapor deposition using diethylzinc and carbon dioxide as reactant sources. In this paper, the dependence of the quality of the ZnO thin film on the growth temperature is studied. A polycrystalline ZnO thin film with a c-axis-orientated wurtize structure is obtained at a growth temperature of 23 degreesC. X-ray diffraction shows that the full width at half maximum (FWHM) of (0 0 2) ZnO, located at 34.42degrees, is approximately 0.26degrees. A pronounced exciton absorption peak is observed in the absorption spectrum. The photoluminescence (PL) spectra show a strong ultraviolet (UV) band emission approximately 3.26 eV with a weak emission related to deep-level defects, implying that the ZnO thin films are nearly stoichiometric. The FWHMs of the PL spectra become narrower with increasing growth temperature. The origin of the UV band is from free exciton recombination, testified by the temperature dependent PL spectra in the range of 81-581 K (C) 2002 Elsevier Science B.V. All rights reserved.
收录类别SCI ; EI
语种英语
文献类型期刊论文
条目标识符http://ir.ciomp.ac.cn/handle/181722/26015
专题中科院长春光机所知识产出
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GB/T 7714
Li B. S.,Liu Y. C.,Zhi Z. Z.,et al. Effect of the growth temperature on ZnO thin films grown by plasma enhanced chemical vapor deposition[J]. Thin Solid Films,2002,414(2):170-174.
APA Li B. S..,Liu Y. C..,Zhi Z. Z..,Shen D. Z..,Lu Y. M..,...&Fan X. W..(2002).Effect of the growth temperature on ZnO thin films grown by plasma enhanced chemical vapor deposition.Thin Solid Films,414(2),170-174.
MLA Li B. S.,et al."Effect of the growth temperature on ZnO thin films grown by plasma enhanced chemical vapor deposition".Thin Solid Films 414.2(2002):170-174.
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