Acceptor formation mechanisms determination from electrical and optical properties of p-type ZnO doped with lithium and nitrogen

	Acceptor formation mechanisms determination from electrical and optical properties of p-type ZnO doped with lithium and nitrogen
其他题名	论文其他题名
	Wang X. H.; Yao B.; Wei Z. P.; Sheng D. Z.; Zhang Z. Z.; Li B. H.; Lu Y. M.; Zhao D. X.; Zhang J. Y.; Fan X. W.; Guan L. X.; Cong C. X.
	2006
发表期刊	Journal of Physics D-Applied Physics
ISSN	0022-3727
卷号	39 期号:21 页码:4568-4571
摘要	A lithium (Li) and nitrogen (N) dual-doped p-type ZnO film ( ZnO : ( Li, N)) was deposited on c-plane sapphire by RF-magnetron sputtering of Zn-2 at.% Li alloy using mixed gases of oxygen and nitrogen and then annealing in N-2 flow. It has a carrier concentration of 3.07 x 10(16) cm(-3) and Hall mobility of 1.74 cm(2) V-1 s(-1). XPS measurement shows that there are Li-Zn-N complexes in the p-type ZnO : ( Li, N), which are demonstrated by photoluminescence measured at various temperatures and different excitation powers to be acceptors and responsible for p-type conductivity of the ZnO : ( Li, N). The optical level of the LiZn-N complex acceptor is estimated to be about 126 meV by measurement of emission energy of free electron to the acceptor level.
收录类别	SCI ; EI
语种	英语
文献类型	期刊论文
条目标识符	http://ir.ciomp.ac.cn/handle/181722/26012
专题	中科院长春光机所知识产出
推荐引用方式 GB/T 7714	Wang X. H.,Yao B.,Wei Z. P.,et al. Acceptor formation mechanisms determination from electrical and optical properties of p-type ZnO doped with lithium and nitrogen[J]. Journal of Physics D-Applied Physics,2006,39(21):4568-4571.
APA	Wang X. H..,Yao B..,Wei Z. P..,Sheng D. Z..,Zhang Z. Z..,...&Cong C. X..(2006).Acceptor formation mechanisms determination from electrical and optical properties of p-type ZnO doped with lithium and nitrogen.Journal of Physics D-Applied Physics,39(21),4568-4571.
MLA	Wang X. H.,et al."Acceptor formation mechanisms determination from electrical and optical properties of p-type ZnO doped with lithium and nitrogen".Journal of Physics D-Applied Physics 39.21(2006):4568-4571.

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