The activation energy of the nitrogen acceptor in p-type ZnO film grown by plasma-assisted molecular beam epitaxy

	The activation energy of the nitrogen acceptor in p-type ZnO film grown by plasma-assisted molecular beam epitaxy
其他题名	论文其他题名
	Sun J. W.; Lu Y. M.; Liu Y. C.; Shen D. Z.; Zhang Z. Z.; Li B. H.; Zhang J. Y.; Yao B.; Zhao D. X.; Fan X. W.
	2006
发表期刊	Solid State Communications
ISSN	0038-1098
卷号	140 期号:7—8 页码:345-348
摘要	The nitrogen-doped, p-type ZnO film was grown by plasma-assisted molecular beam epitaxy (P-MBE) on c-plane sapphire (c-Al2O3) using radical NO as oxygen and nitrogen sources. The activation energy of the nitrogen acceptor (AENA) was obtained by the temperature-dependent Hall effect and photoluminescence (PL) measurements, respectively. However, the values of AENA were rather different for the two methods, i.e., 75 meV for the Hall effect measurement and 145 meV for the photoluminescence measurement. In terms of the electrostatic interaction model, this energy difference was explained by the relationship between the Hall activation energy and the optical activation energy. According to these analyses, the reasonable value of the acceptor activation energy in nitrogen-doped p-type ZnO can be determined either by Hall experiments or by optical methods. (c) 2006 Elsevier Ltd. All rights reserved.
收录类别	SCI ; EI
语种	英语
文献类型	期刊论文
条目标识符	http://ir.ciomp.ac.cn/handle/181722/26010
专题	中科院长春光机所知识产出
推荐引用方式 GB/T 7714	Sun J. W.,Lu Y. M.,Liu Y. C.,et al. The activation energy of the nitrogen acceptor in p-type ZnO film grown by plasma-assisted molecular beam epitaxy[J]. Solid State Communications,2006,140(7—8):345-348.
APA	Sun J. W..,Lu Y. M..,Liu Y. C..,Shen D. Z..,Zhang Z. Z..,...&Fan X. W..(2006).The activation energy of the nitrogen acceptor in p-type ZnO film grown by plasma-assisted molecular beam epitaxy.Solid State Communications,140(7—8),345-348.
MLA	Sun J. W.,et al."The activation energy of the nitrogen acceptor in p-type ZnO film grown by plasma-assisted molecular beam epitaxy".Solid State Communications 140.7—8(2006):345-348.

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