Abnormal temperature behavior of photoluminescence in CdSe/ZnSe self-assembled quantum dots

	Abnormal temperature behavior of photoluminescence in CdSe/ZnSe self-assembled quantum dots
其他题名	论文其他题名
	Zheng J. J.; Zheng Z. H.; Gong W. W.; Hu X. B.; Gao W.
	2008
发表期刊	Solid State Communications
ISSN	0038-1098
卷号	147 期号:11-12 页码:429-432
摘要	We report on the temperature dependence of photoluminescence (PL) of CdSe/ZnSe self-assembled quantum dots (QDs). In the temperature range of 19-120 K, although the energy gap of Use shrinks by 25 meV, the PL of Use QDs does not show any line shift or shape change. According to the equilibrium theories of heteroepitaxial growth, a model involving the presence of interface disorders is suggested to be responsible for this invariant PL. In the temperature range of 120-300 K, the PL peak of CdSe QDs initially blue-shifts and then red-shifts with increasing temperature arising from the thermally activated detrapping of carriers. (C) 2008 Elsevier Ltd. All rights reserved.
收录类别	SCI ; EI
语种	英语
文献类型	期刊论文
条目标识符	http://ir.ciomp.ac.cn/handle/181722/26005
专题	中科院长春光机所知识产出
推荐引用方式 GB/T 7714	Zheng J. J.,Zheng Z. H.,Gong W. W.,et al. Abnormal temperature behavior of photoluminescence in CdSe/ZnSe self-assembled quantum dots[J]. Solid State Communications,2008,147(11-12):429-432.
APA	Zheng J. J.,Zheng Z. H.,Gong W. W.,Hu X. B.,&Gao W..(2008).Abnormal temperature behavior of photoluminescence in CdSe/ZnSe self-assembled quantum dots.Solid State Communications,147(11-12),429-432.
MLA	Zheng J. J.,et al."Abnormal temperature behavior of photoluminescence in CdSe/ZnSe self-assembled quantum dots".Solid State Communications 147.11-12(2008):429-432.

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