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INTERACTION BETWEEN EXCITONS AND ELECTRONS IN ZNSE1-XSX EPILAYERS UNDER HIGH-EXCITATION
其他题名论文其他题名
Guan Z. P.; Zheng Z. H.; Zhang J. H.; Lu Y. M.; Fan G. H.; Fan X. W.
1992
发表期刊Physica Status Solidi B-Basic Research
ISSN0370-1972
卷号169期号:2页码:339-344
摘要Excitonic properties are investigated of ZnSe1-xSx epilayer fabricated on GaAs substrate by a Ap-MOCVD. Luminescence, excitation, and time-resolved spectroscopy are employed to study the interaction between excitons and electrons at 77 and 300 K. Under pulsed N2 laser excitation it is found that the peak shift of the near band edge emission are more large, especially at room temperature. This is due to the fact that the bottoms of the conduction bands are filled at the higher temperature. so the carriers from the exciton-exciton scattering must occupy higher energy levels. Therefore a shift of the peak towards lower energy is expected.
收录类别SCI
语种英语
文献类型期刊论文
条目标识符http://ir.ciomp.ac.cn/handle/181722/25993
专题中科院长春光机所知识产出
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GB/T 7714
Guan Z. P.,Zheng Z. H.,Zhang J. H.,et al. INTERACTION BETWEEN EXCITONS AND ELECTRONS IN ZNSE1-XSX EPILAYERS UNDER HIGH-EXCITATION[J]. Physica Status Solidi B-Basic Research,1992,169(2):339-344.
APA Guan Z. P.,Zheng Z. H.,Zhang J. H.,Lu Y. M.,Fan G. H.,&Fan X. W..(1992).INTERACTION BETWEEN EXCITONS AND ELECTRONS IN ZNSE1-XSX EPILAYERS UNDER HIGH-EXCITATION.Physica Status Solidi B-Basic Research,169(2),339-344.
MLA Guan Z. P.,et al."INTERACTION BETWEEN EXCITONS AND ELECTRONS IN ZNSE1-XSX EPILAYERS UNDER HIGH-EXCITATION".Physica Status Solidi B-Basic Research 169.2(1992):339-344.
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