Changchun Institute of Optics,Fine Mechanics and Physics,CAS
INTERACTION BETWEEN EXCITONS AND ELECTRONS IN ZNSE1-XSX EPILAYERS UNDER HIGH-EXCITATION | |
其他题名 | 论文其他题名 |
Guan Z. P.; Zheng Z. H.; Zhang J. H.; Lu Y. M.; Fan G. H.; Fan X. W. | |
1992 | |
发表期刊 | Physica Status Solidi B-Basic Research |
ISSN | 0370-1972 |
卷号 | 169期号:2页码:339-344 |
摘要 | Excitonic properties are investigated of ZnSe1-xSx epilayer fabricated on GaAs substrate by a Ap-MOCVD. Luminescence, excitation, and time-resolved spectroscopy are employed to study the interaction between excitons and electrons at 77 and 300 K. Under pulsed N2 laser excitation it is found that the peak shift of the near band edge emission are more large, especially at room temperature. This is due to the fact that the bottoms of the conduction bands are filled at the higher temperature. so the carriers from the exciton-exciton scattering must occupy higher energy levels. Therefore a shift of the peak towards lower energy is expected. |
收录类别 | SCI |
语种 | 英语 |
文献类型 | 期刊论文 |
条目标识符 | http://ir.ciomp.ac.cn/handle/181722/25993 |
专题 | 中科院长春光机所知识产出 |
推荐引用方式 GB/T 7714 | Guan Z. P.,Zheng Z. H.,Zhang J. H.,et al. INTERACTION BETWEEN EXCITONS AND ELECTRONS IN ZNSE1-XSX EPILAYERS UNDER HIGH-EXCITATION[J]. Physica Status Solidi B-Basic Research,1992,169(2):339-344. |
APA | Guan Z. P.,Zheng Z. H.,Zhang J. H.,Lu Y. M.,Fan G. H.,&Fan X. W..(1992).INTERACTION BETWEEN EXCITONS AND ELECTRONS IN ZNSE1-XSX EPILAYERS UNDER HIGH-EXCITATION.Physica Status Solidi B-Basic Research,169(2),339-344. |
MLA | Guan Z. P.,et al."INTERACTION BETWEEN EXCITONS AND ELECTRONS IN ZNSE1-XSX EPILAYERS UNDER HIGH-EXCITATION".Physica Status Solidi B-Basic Research 169.2(1992):339-344. |
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