Study of valence band offsets of Ge/ZnS(111) heterojunctions by synchrotron radiation photoemission

	Study of valence band offsets of Ge/ZnS(111) heterojunctions by synchrotron radiation photoemission
其他题名	论文其他题名
	Ban D. Y.; Yang F. Y.; Fang R. C.; Xu S. H.; Xu P. S.; Meng X. X.
	1996
发表期刊	Science in China Series a-Mathematics Physics Astronomy
ISSN	1006-9283
卷号	39 期号:6 页码:637-646
摘要	The band lineups at Ge/ZnS(111) interfaces have been studied by synchrotron radiation photoemission spectroscopy. Surface sensitive core level spectra show that Ge and S atoms react with each other at the interface. Using both the techniques' of core level and valence band spectra, the valence band offsets of such a kind of heterojunctions have been measured. The values are (1.94+/-0.1) eV and (2.23+/-0.1) eV for the heterojunctions grown at the substrate temperature of 200 degrees C and room temperature, respectively. The experimental results are in good agreement with some theoretical predictions.
收录类别	SCI
语种	英语
WOS记录号	WOS:A1996WA86700010
引用统计
文献类型	期刊论文
条目标识符	http://ir.ciomp.ac.cn/handle/181722/25960
专题	中科院长春光机所知识产出
推荐引用方式 GB/T 7714	Ban D. Y.,Yang F. Y.,Fang R. C.,et al. Study of valence band offsets of Ge/ZnS(111) heterojunctions by synchrotron radiation photoemission[J]. Science in China Series a-Mathematics Physics Astronomy,1996,39(6):637-646.
APA	Ban D. Y.,Yang F. Y.,Fang R. C.,Xu S. H.,Xu P. S.,&Meng X. X..(1996).Study of valence band offsets of Ge/ZnS(111) heterojunctions by synchrotron radiation photoemission.Science in China Series a-Mathematics Physics Astronomy,39(6),637-646.
MLA	Ban D. Y.,et al."Study of valence band offsets of Ge/ZnS(111) heterojunctions by synchrotron radiation photoemission".Science in China Series a-Mathematics Physics Astronomy 39.6(1996):637-646.

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