Point defects in active layers of TFEL devices based on ZnS

	Point defects in active layers of TFEL devices based on ZnS
其他题名	论文其他题名
	Lou Z. D.; Georgobiani A. N.; Xu Z.; Xu C. X.; Teng F.; Yu L.; Xu X. R.
	1998
发表期刊	Chinese Science Bulletin
ISSN	1001-6538
卷号	43 期号:6 页码:518-522
摘要	Point defects in the active layer of a layered optimization thin film electroluminescent device of ZnS: Er3+ were studied. The results indicate that besides Er3+ substituting for Zn2+ as luminescent centers, the dominant point defects are sulfur vacancies, zinc vacancies, shallow donors and deep acceptors. Their influence on electroluminescence is discussed.
收录类别	SCI
语种	英语
文献类型	期刊论文
条目标识符	http://ir.ciomp.ac.cn/handle/181722/25948
专题	中科院长春光机所知识产出
推荐引用方式 GB/T 7714	Lou Z. D.,Georgobiani A. N.,Xu Z.,et al. Point defects in active layers of TFEL devices based on ZnS[J]. Chinese Science Bulletin,1998,43(6):518-522.
APA	Lou Z. D..,Georgobiani A. N..,Xu Z..,Xu C. X..,Teng F..,...&Xu X. R..(1998).Point defects in active layers of TFEL devices based on ZnS.Chinese Science Bulletin,43(6),518-522.
MLA	Lou Z. D.,et al."Point defects in active layers of TFEL devices based on ZnS".Chinese Science Bulletin 43.6(1998):518-522.