Optical properties and electrical characterization of p-type ZnO thin films prepared by thermally oxiding Zn3N2 thin films

	Optical properties and electrical characterization of p-type ZnO thin films prepared by thermally oxiding Zn3N2 thin films
其他题名	论文其他题名
	Li B. S.; Liu Y. C.; Zhi Z. Z.; Shen D. Z.; Lu Y. M.; Zhang J. Y.; Fan X. W.; Mu R. X.; Henderson D. O.
	2003
发表期刊	Journal of Materials Research
ISSN	0884-2914
卷号	18 期号:1 页码:8-13
摘要	In this paper, we report a simple method for preparing p-type ZnO thin films by thermal oxidization of Zn3N2 thin films. The Zn3N2 films were grown on fused silica substrates by using plasma-enhanced chemical vapor deposition from a Zn(C2H5)(2) and NH3 gas mixture. The Zn3N2 film with a cubic antibixbyite structure transformed to ZnO:N with a hexagonal structure as the annealing temperature reached 500degreesC. When the annealing temperature reached 700degreesC, a high-quality p-type ZnO film with a carrier density of 4.16x10(17) cm(-3) was obtained, for which the film showed a strong near-band-edge emission at 3.30 eV without deep-level emission, and the full width at half-maximum of the photoluminescence spectrum was 120 meV at room temperature. The origin of the ultraviolet band was the overlap of free exciton and the bound exciton. The N concentration was as high as 10(21) cm(-3), which could be controlled by adjusting the parameters of the annealing processes.
收录类别	SCI
语种	英语
文献类型	期刊论文
条目标识符	http://ir.ciomp.ac.cn/handle/181722/25840
专题	中科院长春光机所知识产出
推荐引用方式 GB/T 7714	Li B. S.,Liu Y. C.,Zhi Z. Z.,et al. Optical properties and electrical characterization of p-type ZnO thin films prepared by thermally oxiding Zn3N2 thin films[J]. Journal of Materials Research,2003,18(1):8-13.
APA	Li B. S..,Liu Y. C..,Zhi Z. Z..,Shen D. Z..,Lu Y. M..,...&Henderson D. O..(2003).Optical properties and electrical characterization of p-type ZnO thin films prepared by thermally oxiding Zn3N2 thin films.Journal of Materials Research,18(1),8-13.
MLA	Li B. S.,et al."Optical properties and electrical characterization of p-type ZnO thin films prepared by thermally oxiding Zn3N2 thin films".Journal of Materials Research 18.1(2003):8-13.

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