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A study on photoluminescence characterization of high-quality nanocrystalline ZnO thin films
其他题名论文其他题名
Zhang X. T.; Xiao Z. Y.; Zhang W. L.; Gao H.; Wang Y. X.; Liu Y. C.; Zhang Y. J.; Xu W.
2003
发表期刊Acta Physica Sinica
ISSN1000-3290
卷号52期号:3页码:740-744
摘要In this paper, we report the photoluminescence from high-quality nanocrystalline ZnO thin films. The high-quality nanocrystalline ZnO thin films are prepared by thermal oxidation of ZnS films at 800degreesC, which are deposited by low-pressure metal-organic chemical vapor deposition technique. X-ray diffraction indicated that the nanocrystalline ZnO thin films have a polycrystalline hexagonal wurtzite structure. A strong ultraviolet emission peak at 3.26 eV was observed and the deep-level emission band was barely observable at room temperature. The strength ( Gamma(LO)) of the exciton-longitudinal-optical ( LO) -phonon coupling is deduced from the temperature dependence of the full width at half maximum of the fundamental excitonic peak. Gamma(LO) is reduced greatly due to the quantum confinement effect.
收录类别SCI
语种中文
文献类型期刊论文
条目标识符http://ir.ciomp.ac.cn/handle/181722/25827
专题中科院长春光机所知识产出
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Zhang X. T.,Xiao Z. Y.,Zhang W. L.,et al. A study on photoluminescence characterization of high-quality nanocrystalline ZnO thin films[J]. Acta Physica Sinica,2003,52(3):740-744.
APA Zhang X. T..,Xiao Z. Y..,Zhang W. L..,Gao H..,Wang Y. X..,...&Xu W..(2003).A study on photoluminescence characterization of high-quality nanocrystalline ZnO thin films.Acta Physica Sinica,52(3),740-744.
MLA Zhang X. T.,et al."A study on photoluminescence characterization of high-quality nanocrystalline ZnO thin films".Acta Physica Sinica 52.3(2003):740-744.
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