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Effects of annealing on structural, optical and electrical properties of Al-doped ZnO thin films
其他题名论文其他题名
Chen Y. W.; Yu W. H.; Liu Y. C.
2004
发表期刊Science in China Series G-Physics Mechanics & Astronomy
ISSN1672-1799
卷号47期号:5页码:588-596
摘要In this paper, the structural, electrical and optical properties of Al-doped zinc oxide (ZnO:Al) thin films onto quartz substrates prepared by electron beam evaporation technique were studied. All samples are polycrystal with a hexagonal structure and c-axis preferred orientation. The intense UV emissions and weak deep-level green emissions were observed. The films show high transparency, conductivity and high carrier concentration. Van der Pauw measurements show that the films are n-type degenerate semiconductor. The lowest resistivity is 6.7x10(-4) Omega(.)cm at room temperature. These films exhibit a carrier density above 10(20) cm(-3). The conduction mechanism was discussed. The behavior of metallic conduction can be observed in the high temperature range.
收录类别SCI
语种英语
文献类型期刊论文
条目标识符http://ir.ciomp.ac.cn/handle/181722/25813
专题中科院长春光机所知识产出
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Chen Y. W.,Yu W. H.,Liu Y. C.. Effects of annealing on structural, optical and electrical properties of Al-doped ZnO thin films[J]. Science in China Series G-Physics Mechanics & Astronomy,2004,47(5):588-596.
APA Chen Y. W.,Yu W. H.,&Liu Y. C..(2004).Effects of annealing on structural, optical and electrical properties of Al-doped ZnO thin films.Science in China Series G-Physics Mechanics & Astronomy,47(5),588-596.
MLA Chen Y. W.,et al."Effects of annealing on structural, optical and electrical properties of Al-doped ZnO thin films".Science in China Series G-Physics Mechanics & Astronomy 47.5(2004):588-596.
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