Study on growth and optical properties of ZnO thin films on Si(111) substrate by plasma assisted molecular beam epitaxy (P-MBE)

	Study on growth and optical properties of ZnO thin films on Si(111) substrate by plasma assisted molecular beam epitaxy (P-MBE)
其他题名	论文其他题名
	Yan J. F.; Liang H. W.; Lu Y. M.; Liu Y. C.; Li B. H.; Shen D. Z.; Zhang J. Y.; Fan X. W.
	2004
发表期刊	Journal of Infrared and Millimeter Waves
ISSN	1001-9014
卷号	23 期号:2 页码:103-106
摘要	Plasma assisted molecular beam epitaxy was employed to prepare ZnO thin films on Si (111) substrate. In order to look for the optimal substrate temperature for growth of ZnO thin films, the dependence of the quality of ZnO thin films on substrate temperature ranging from 350degreesC to 750degreesC was studied by X-ray diffraction (XRD) and photoluminescence (PL) spectra analysis. The full width at half maximum (FWHM) of XRD and PL spectra become narrower and then wider, a preferred oriented ZnO thin film on Si substrate was obtained at 550 degreesC. The PL spectra show a strong ultraviolet(UV) band emission with a weak deep-level emission. The origin of the UV band is from free excition recombination, testified by the temperature dependent PL spectra in the rang of 81 K similar to 300K.
收录类别	SCI
语种	中文
文献类型	期刊论文
条目标识符	http://ir.ciomp.ac.cn/handle/181722/25792
专题	中科院长春光机所知识产出
推荐引用方式 GB/T 7714	Yan J. F.,Liang H. W.,Lu Y. M.,et al. Study on growth and optical properties of ZnO thin films on Si(111) substrate by plasma assisted molecular beam epitaxy (P-MBE)[J]. Journal of Infrared and Millimeter Waves,2004,23(2):103-106.
APA	Yan J. F..,Liang H. W..,Lu Y. M..,Liu Y. C..,Li B. H..,...&Fan X. W..(2004).Study on growth and optical properties of ZnO thin films on Si(111) substrate by plasma assisted molecular beam epitaxy (P-MBE).Journal of Infrared and Millimeter Waves,23(2),103-106.
MLA	Yan J. F.,et al."Study on growth and optical properties of ZnO thin films on Si(111) substrate by plasma assisted molecular beam epitaxy (P-MBE)".Journal of Infrared and Millimeter Waves 23.2(2004):103-106.

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