980nm high power bottom emitting VCSELs

	980nm high power bottom emitting VCSELs
其他题名	论文其他题名
	Jin Z. H.; Sun Y. F.; Ning Y. Q.; Yan C. L.; Qin L.; Liu Y.; Tao G. T.; Wang L. J.; Cui D. F.; Li H. Q.; Xu Z. Y.
	2005
发表期刊	Journal of Infrared and Millimeter Waves
ISSN	1001-9014
卷号	24 期号:1 页码:61-64
摘要	The structure design and fabrication process of 980 nm high power vertical-cavity surface-emitting laser diodes (VCSELs) were reported. The threshold current, output power and spectrum characteristics were investigated. An optical output power as high as 1.42W for a 400 mum diameter device was achieved at room temperature. To our knowledge, this is the highest record for a single device up to now. The dependence of the CW emitting wavelength and FWHM of spectrum of a 600mum diameter device on injection current indicated the heating effects in the active region. The output power performance was further characterized by using pulse operation with pulse width from 50 similar to 1000mus.
收录类别	SCI
语种	中文
文献类型	期刊论文
条目标识符	http://ir.ciomp.ac.cn/handle/181722/25751
专题	中科院长春光机所知识产出
推荐引用方式 GB/T 7714	Jin Z. H.,Sun Y. F.,Ning Y. Q.,et al. 980nm high power bottom emitting VCSELs[J]. Journal of Infrared and Millimeter Waves,2005,24(1):61-64.
APA	Jin Z. H..,Sun Y. F..,Ning Y. Q..,Yan C. L..,Qin L..,...&Xu Z. Y..(2005).980nm high power bottom emitting VCSELs.Journal of Infrared and Millimeter Waves,24(1),61-64.
MLA	Jin Z. H.,et al."980nm high power bottom emitting VCSELs".Journal of Infrared and Millimeter Waves 24.1(2005):61-64.

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