Growth and electronic and magnetic properties of alpha-FeSe films on GaAs (001) substrates

	Growth and electronic and magnetic properties of alpha-FeSe films on GaAs (001) substrates
其他题名	论文其他题名
	Liu K. W.; Zhang J. Y.; Li B. H.; Li B. S.; Shan C. X.; Lu Y. M.; Shen D. Z.
	2007
发表期刊	Journal of Vacuum Science & Technology A
ISSN	0734-2101
卷号	25 期号:2 页码:232-235
摘要	FeSe films have been grown on GaAs (001) substrates by low-pressure metal organic vapor deposition at different temperatures. X-ray diffraction analysis indicated that the FeSe films grown at substrate temperatures (T-s) between 220 and 340 degrees C were preferentially oriented with tetragonal structure. It was not possible to deposit films at T, above 400 degrees C. The atomic molar ratios of Se/Fe increased with increasing the flow rate of H2Se/Fe(CO)(5) and the growth temperature. The electronic property results showed that the conductive type of FeSe could be adjusted by controlling the growth temperature. The coercivity of FeSe decreased with increasing the growth temperature, from 220 to 300 degrees C due to the improvement of crystal quality. (c) 2007 American Vacuum Society.
收录类别	SCI
语种	英语
文献类型	期刊论文
条目标识符	http://ir.ciomp.ac.cn/handle/181722/25727
专题	中科院长春光机所知识产出
推荐引用方式 GB/T 7714	Liu K. W.,Zhang J. Y.,Li B. H.,et al. Growth and electronic and magnetic properties of alpha-FeSe films on GaAs (001) substrates[J]. Journal of Vacuum Science & Technology A,2007,25(2):232-235.
APA	Liu K. W..,Zhang J. Y..,Li B. H..,Li B. S..,Shan C. X..,...&Shen D. Z..(2007).Growth and electronic and magnetic properties of alpha-FeSe films on GaAs (001) substrates.Journal of Vacuum Science & Technology A,25(2),232-235.
MLA	Liu K. W.,et al."Growth and electronic and magnetic properties of alpha-FeSe films on GaAs (001) substrates".Journal of Vacuum Science & Technology A 25.2(2007):232-235.

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