Study of ultraviolet photoluminescence from SiC nanorods

	Study of ultraviolet photoluminescence from SiC nanorods
其他题名	论文其他题名
	Jin H.; Bu F. L.; Wang R.; Li L. H.; Yang W. Y.; Zhang L. G.; An L. N.
	2009
发表期刊	Acta Physica Sinica
ISSN	1000-3290
卷号	58 期号:4 页码:2594-2598
摘要	Silicon carbide (SiC) nanorods were synthesized via catalyst-assistant crystallization of amorphous silicon carbonitride. An intensive sharp photoluminescence peak at 378 nm was observed from the SiC nanorods. SEM, TEM, HRTEM and XRD was used to characterize the structure. XRD pattern showed that the nanorods are pure 3C-SiC containing stacking faults. The HRTEM image showed that the stacking faults were threefold stacking faults, which resembled the structure of 6H-SiC. We attribute the emission to these stacking faults, and discussed the emission mechanism.
收录类别	SCI
语种	中文
文献类型	期刊论文
条目标识符	http://ir.ciomp.ac.cn/handle/181722/25652
专题	中科院长春光机所知识产出
推荐引用方式 GB/T 7714	Jin H.,Bu F. L.,Wang R.,et al. Study of ultraviolet photoluminescence from SiC nanorods[J]. Acta Physica Sinica,2009,58(4):2594-2598.
APA	Jin H..,Bu F. L..,Wang R..,Li L. H..,Yang W. Y..,...&An L. N..(2009).Study of ultraviolet photoluminescence from SiC nanorods.Acta Physica Sinica,58(4),2594-2598.
MLA	Jin H.,et al."Study of ultraviolet photoluminescence from SiC nanorods".Acta Physica Sinica 58.4(2009):2594-2598.