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Calculation of field enhancement factor of gated nanowire
其他题名论文其他题名
Lei D.; Wang W. B.; Zeng L. Y.; Liang J. Q.
2009
发表期刊Acta Physica Sinica
ISSN1000-3290
卷号58期号:5页码:3383-3389
摘要To estimate the field enhancement factor of the gated nanowire, the image charge model of floating sphere between parallel gate and cathode plates is proposed. The field enhancement factor of the gated nanowire is expressed by beta = 1/2 (3.5 + L/r(0) + W), where L and r(0) are the length and tip radius of nanowire, respectively, and W is a function of the gate-hole radius R, gate-cathode distance d and the geometrical parameters of the nanowire. The calculation results show that the influence of the aspect ratio of the nanowire on the enhancement factor is remarkable, i.e., the enhancement factor increases rapidly with the increase of the length and top curvature of the nanowire. Furthermore, the enhancement factor decreases with the increase of the gate-cathode distance and is equal to beta(0) = 3.5 + L/r(0) when the gate-cathode distance tends to infinite. The smaller the gate-hole radius, the larger the enhancement factor, and the enhancement factor will be equal to beta = beta(0) + 1.202 (L/d)(3) when the gate-hole radius tends to zero.
收录类别SCI
语种中文
文献类型期刊论文
条目标识符http://ir.ciomp.ac.cn/handle/181722/25646
专题中科院长春光机所知识产出
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Lei D.,Wang W. B.,Zeng L. Y.,et al. Calculation of field enhancement factor of gated nanowire[J]. Acta Physica Sinica,2009,58(5):3383-3389.
APA Lei D.,Wang W. B.,Zeng L. Y.,&Liang J. Q..(2009).Calculation of field enhancement factor of gated nanowire.Acta Physica Sinica,58(5),3383-3389.
MLA Lei D.,et al."Calculation of field enhancement factor of gated nanowire".Acta Physica Sinica 58.5(2009):3383-3389.
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