Ta-doped In2O3 transparent conductive films with high transmittance and low resistance

	Ta-doped In2O3 transparent conductive films with high transmittance and low resistance
其他题名	论文其他题名
	Wang B.; Hu L. M.; Liu F. M.; Qin L.; Liu Y.; Wang L. J.
	2010
发表期刊	Optica Applicata
ISSN	0078-5466
卷号	40 期号:1 页码:25-31
摘要	Ta-doped In2O3 transparent conductive oxide (TCO) thin films are deposited on glass substrates by radio-frequency (RF) sputtering at room-temperature. The influence of sputtering power on the structural, morphologic, electrical, and optical properties of the films is investigated by X-ray diffraction (XRD), field emission scanning electron microscopy (FE-SEM), Hall measurement, and optical transmission spectroscopy. The obtained films are polycrystalline with a cubic structure and preferentially oriented in the (222) crystallographic direction. The minimum resistivity of 2.8x10(-4) Omega cm is obtained from the film deposited at the sputtering power of 170 W. The average optical transmittance of the films is over 90%.
收录类别	SCI
语种	英语
文献类型	期刊论文
条目标识符	http://ir.ciomp.ac.cn/handle/181722/25638
专题	中科院长春光机所知识产出
推荐引用方式 GB/T 7714	Wang B.,Hu L. M.,Liu F. M.,et al. Ta-doped In2O3 transparent conductive films with high transmittance and low resistance[J]. Optica Applicata,2010,40(1):25-31.
APA	Wang B.,Hu L. M.,Liu F. M.,Qin L.,Liu Y.,&Wang L. J..(2010).Ta-doped In2O3 transparent conductive films with high transmittance and low resistance.Optica Applicata,40(1),25-31.
MLA	Wang B.,et al."Ta-doped In2O3 transparent conductive films with high transmittance and low resistance".Optica Applicata 40.1(2010):25-31.

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