Changchun Institute of Optics,Fine Mechanics and Physics,CAS
Broad-Area Vertical Cavity Semiconductor Optical Amplifiers | |
其他题名 | 论文其他题名 |
Sun C. L.; Liang X. M.; Qin L.; Jia L. H.; Ning Y. Q.; Wang L. J. | |
2010 | |
发表期刊 | Spectroscopy and Spectral Analysis |
ISSN | 1000-0593 |
卷号 | 30期号:5页码:1413-1416 |
摘要 | Based on the broad-area vertical cavity semiconductor optical amplifiers (VCSOA) of 970 nm, the amplifier gain and bandwidth characteristics were experimentally investigated and analyzed in the reflection mode. For 970 nm broad-area VCSOA operated in reflective mode, the maximum gain amplification of 24. 8 dB and optical bandwidth of 0. 14 nm (25 GHz) were reached when the injection current was 57% of threshold current and the signal input power was 0. 7 W. The experimental gain value was larger than the theoretical value, due to many modes existing in VCSOA. Each mode had relative gain amplification, so the experimental gain value was larger than the theoretical value. This kind of broad-area VCSOA was improved not only in optical gain but also in saturated input power. The authors optimized the structure design of the wide area VCSOA of 970 rim. The simulation results showed that the improvement of the gain and bandwidth of the semiconductor laser could be obtained by appropriately reducing the DBR reflectivity of the emitting laser on the vertical cavity surface. |
收录类别 | SCI |
语种 | 中文 |
文献类型 | 期刊论文 |
条目标识符 | http://ir.ciomp.ac.cn/handle/181722/25629 |
专题 | 中科院长春光机所知识产出 |
推荐引用方式 GB/T 7714 | Sun C. L.,Liang X. M.,Qin L.,et al. Broad-Area Vertical Cavity Semiconductor Optical Amplifiers[J]. Spectroscopy and Spectral Analysis,2010,30(5):1413-1416. |
APA | Sun C. L.,Liang X. M.,Qin L.,Jia L. H.,Ning Y. Q.,&Wang L. J..(2010).Broad-Area Vertical Cavity Semiconductor Optical Amplifiers.Spectroscopy and Spectral Analysis,30(5),1413-1416. |
MLA | Sun C. L.,et al."Broad-Area Vertical Cavity Semiconductor Optical Amplifiers".Spectroscopy and Spectral Analysis 30.5(2010):1413-1416. |
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