Broad-Area Vertical Cavity Semiconductor Optical Amplifiers

	Broad-Area Vertical Cavity Semiconductor Optical Amplifiers
其他题名	论文其他题名
	Sun C. L.; Liang X. M.; Qin L.; Jia L. H.; Ning Y. Q.; Wang L. J.
	2010
发表期刊	Spectroscopy and Spectral Analysis
ISSN	1000-0593
卷号	30 期号:5 页码:1413-1416
摘要	Based on the broad-area vertical cavity semiconductor optical amplifiers (VCSOA) of 970 nm, the amplifier gain and bandwidth characteristics were experimentally investigated and analyzed in the reflection mode. For 970 nm broad-area VCSOA operated in reflective mode, the maximum gain amplification of 24. 8 dB and optical bandwidth of 0. 14 nm (25 GHz) were reached when the injection current was 57% of threshold current and the signal input power was 0. 7 W. The experimental gain value was larger than the theoretical value, due to many modes existing in VCSOA. Each mode had relative gain amplification, so the experimental gain value was larger than the theoretical value. This kind of broad-area VCSOA was improved not only in optical gain but also in saturated input power. The authors optimized the structure design of the wide area VCSOA of 970 rim. The simulation results showed that the improvement of the gain and bandwidth of the semiconductor laser could be obtained by appropriately reducing the DBR reflectivity of the emitting laser on the vertical cavity surface.
收录类别	SCI
语种	中文
文献类型	期刊论文
条目标识符	http://ir.ciomp.ac.cn/handle/181722/25629
专题	中科院长春光机所知识产出
推荐引用方式 GB/T 7714	Sun C. L.,Liang X. M.,Qin L.,et al. Broad-Area Vertical Cavity Semiconductor Optical Amplifiers[J]. Spectroscopy and Spectral Analysis,2010,30(5):1413-1416.
APA	Sun C. L.,Liang X. M.,Qin L.,Jia L. H.,Ning Y. Q.,&Wang L. J..(2010).Broad-Area Vertical Cavity Semiconductor Optical Amplifiers.Spectroscopy and Spectral Analysis,30(5),1413-1416.
MLA	Sun C. L.,et al."Broad-Area Vertical Cavity Semiconductor Optical Amplifiers".Spectroscopy and Spectral Analysis 30.5(2010):1413-1416.

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