Ultraviolet emissions excited by accelerated electrons

	Ultraviolet emissions excited by accelerated electrons
其他题名	论文其他题名
	Ni P. N.; Shan C. X.; Wang S. P.; Li B. H.; Zhang Z. Z.; Shen D. Z.
	2012
发表期刊	Optics Letters
ISSN	0146-9592
卷号	37 期号:9 页码:1568-1570
摘要	By employing an insulating zinc oxide (i-ZnO) as an electron accelerating layer, and an n-type ZnO as an active layer, ultraviolet (UV) emissions at 385 nm caused by the excitation of the n-ZnO layer by the accelerated electrons from the i-ZnO layer have been realized. By replacing the active layer with larger bandgap Mg0.39Zn0.61O and properly optimizing the structure, shorter wavelength emissions at around 328 nm have been obtained. Considering that the p-type doping of wide bandgap semiconductors is still a challenging issue, the results reported in this Letter may provide a promising alternative route to UV emissions. (C) 2012 Optical Society of America
收录类别	SCI
语种	英语
文献类型	期刊论文
条目标识符	http://ir.ciomp.ac.cn/handle/181722/25556
专题	中科院长春光机所知识产出
推荐引用方式 GB/T 7714	Ni P. N.,Shan C. X.,Wang S. P.,et al. Ultraviolet emissions excited by accelerated electrons[J]. Optics Letters,2012,37(9):1568-1570.
APA	Ni P. N.,Shan C. X.,Wang S. P.,Li B. H.,Zhang Z. Z.,&Shen D. Z..(2012).Ultraviolet emissions excited by accelerated electrons.Optics Letters,37(9),1568-1570.
MLA	Ni P. N.,et al."Ultraviolet emissions excited by accelerated electrons".Optics Letters 37.9(2012):1568-1570.

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