STUDIES ON DEEP LEVELS IN GAAS EPILAYERS GROWN ON SI BY METAL-ORGANIC CHEMICAL-VAPOR-DEPOSITION .2. 1.13 EV PHOTOLUMINESCENCE EMISSION

	STUDIES ON DEEP LEVELS IN GAAS EPILAYERS GROWN ON SI BY METAL-ORGANIC CHEMICAL-VAPOR-DEPOSITION .2. 1.13 EV PHOTOLUMINESCENCE EMISSION
其他题名	论文其他题名
	Zhao J. L.; Gao Y.; Liu X. Y.; Su X. A.; Huang S. H.; Yu J. Q.; Liang J. C.; Gao H. K.
	1994
发表期刊	Journal of Materials Science Letters
ISSN	0261-8028
卷号	13 期号:23 页码:1694-1696
收录类别	SCI
语种	英语
WOS记录号	WOS:A1994PX08400014
引用统计	被引频次：3[WOS] [WOS记录] [WOS相关记录]
文献类型	期刊论文
条目标识符	http://ir.ciomp.ac.cn/handle/181722/25481
专题	中科院长春光机所知识产出
推荐引用方式 GB/T 7714	Zhao J. L.,Gao Y.,Liu X. Y.,et al. STUDIES ON DEEP LEVELS IN GAAS EPILAYERS GROWN ON SI BY METAL-ORGANIC CHEMICAL-VAPOR-DEPOSITION .2. 1.13 EV PHOTOLUMINESCENCE EMISSION[J]. Journal of Materials Science Letters,1994,13(23):1694-1696.
APA	Zhao J. L..,Gao Y..,Liu X. Y..,Su X. A..,Huang S. H..,...&Gao H. K..(1994).STUDIES ON DEEP LEVELS IN GAAS EPILAYERS GROWN ON SI BY METAL-ORGANIC CHEMICAL-VAPOR-DEPOSITION .2. 1.13 EV PHOTOLUMINESCENCE EMISSION.Journal of Materials Science Letters,13(23),1694-1696.
MLA	Zhao J. L.,et al."STUDIES ON DEEP LEVELS IN GAAS EPILAYERS GROWN ON SI BY METAL-ORGANIC CHEMICAL-VAPOR-DEPOSITION .2. 1.13 EV PHOTOLUMINESCENCE EMISSION".Journal of Materials Science Letters 13.23(1994):1694-1696.