STUDIES ON DEEP LEVELS IN GAAS EPILAYERS GROWN ON SI BY METAL-ORGANIC CHEMICAL-VAPOR-DEPOSITION .3. 0.78 AND 0.84 EV PHOTOLUMINESCENCE EMISSIONS

	STUDIES ON DEEP LEVELS IN GAAS EPILAYERS GROWN ON SI BY METAL-ORGANIC CHEMICAL-VAPOR-DEPOSITION .3. 0.78 AND 0.84 EV PHOTOLUMINESCENCE EMISSIONS
其他题名	论文其他题名
	Zhao J. L.; Gao Y.; Liu X. Y.; Dou K.; Huang S. H.; Yu J. Q.; Liang J. C.; Gao H. K.
	1995
发表期刊	Journal of Materials Science Letters
ISSN	0261-8028
卷号	14 期号:14 页码:1004-1006
收录类别	SCI
语种	英语
文献类型	期刊论文
条目标识符	http://ir.ciomp.ac.cn/handle/181722/25471
专题	中科院长春光机所知识产出
推荐引用方式 GB/T 7714	Zhao J. L.,Gao Y.,Liu X. Y.,et al. STUDIES ON DEEP LEVELS IN GAAS EPILAYERS GROWN ON SI BY METAL-ORGANIC CHEMICAL-VAPOR-DEPOSITION .3. 0.78 AND 0.84 EV PHOTOLUMINESCENCE EMISSIONS[J]. Journal of Materials Science Letters,1995,14(14):1004-1006.
APA	Zhao J. L..,Gao Y..,Liu X. Y..,Dou K..,Huang S. H..,...&Gao H. K..(1995).STUDIES ON DEEP LEVELS IN GAAS EPILAYERS GROWN ON SI BY METAL-ORGANIC CHEMICAL-VAPOR-DEPOSITION .3. 0.78 AND 0.84 EV PHOTOLUMINESCENCE EMISSIONS.Journal of Materials Science Letters,14(14),1004-1006.
MLA	Zhao J. L.,et al."STUDIES ON DEEP LEVELS IN GAAS EPILAYERS GROWN ON SI BY METAL-ORGANIC CHEMICAL-VAPOR-DEPOSITION .3. 0.78 AND 0.84 EV PHOTOLUMINESCENCE EMISSIONS".Journal of Materials Science Letters 14.14(1995):1004-1006.