LUMINESCENCE OF ER-IMPLANTED POROUS SILICON

	LUMINESCENCE OF ER-IMPLANTED POROUS SILICON
其他题名	论文其他题名
	Li Y.; Zhou Y. D.; Li J. S.; Jiang H.; Jin Y. X.
	1995
发表期刊	Solid State Communications
ISSN	0038-1098
卷号	96 期号:5 页码:317-320
摘要	After Er+ ion implantation the bright visible emissions of porous silicon (PSI) still remain. After annealing 1.54 mu m characteristic emissions of Er3+ in PSi have been measured, and its intensity is much more intense than that of Si processed by same conditions. Further experiment shows that enhancement of the Er3+ emission relates to the surface layer of porous silicon. It is probable that the impurities introduced in surface layer by electrochemical process give rise to 1.54 mu m luminescence enhancement.
收录类别	SCI
语种	英语
WOS记录号	WOS:A1995RU49300012
引用统计
文献类型	期刊论文
条目标识符	http://ir.ciomp.ac.cn/handle/181722/25465
专题	中科院长春光机所知识产出
推荐引用方式 GB/T 7714	Li Y.,Zhou Y. D.,Li J. S.,et al. LUMINESCENCE OF ER-IMPLANTED POROUS SILICON[J]. Solid State Communications,1995,96(5):317-320.
APA	Li Y.,Zhou Y. D.,Li J. S.,Jiang H.,&Jin Y. X..(1995).LUMINESCENCE OF ER-IMPLANTED POROUS SILICON.Solid State Communications,96(5),317-320.
MLA	Li Y.,et al."LUMINESCENCE OF ER-IMPLANTED POROUS SILICON".Solid State Communications 96.5(1995):317-320.