Changchun Institute of Optics,Fine Mechanics and Physics,CAS
LUMINESCENCE OF ER-IMPLANTED POROUS SILICON | |
其他题名 | 论文其他题名 |
Li Y.; Zhou Y. D.; Li J. S.; Jiang H.; Jin Y. X. | |
1995 | |
发表期刊 | Solid State Communications |
ISSN | 0038-1098 |
卷号 | 96期号:5页码:317-320 |
摘要 | After Er+ ion implantation the bright visible emissions of porous silicon (PSI) still remain. After annealing 1.54 mu m characteristic emissions of Er3+ in PSi have been measured, and its intensity is much more intense than that of Si processed by same conditions. Further experiment shows that enhancement of the Er3+ emission relates to the surface layer of porous silicon. It is probable that the impurities introduced in surface layer by electrochemical process give rise to 1.54 mu m luminescence enhancement. |
收录类别 | SCI |
语种 | 英语 |
WOS记录号 | WOS:A1995RU49300012 |
引用统计 | |
文献类型 | 期刊论文 |
条目标识符 | http://ir.ciomp.ac.cn/handle/181722/25465 |
专题 | 中科院长春光机所知识产出 |
推荐引用方式 GB/T 7714 | Li Y.,Zhou Y. D.,Li J. S.,et al. LUMINESCENCE OF ER-IMPLANTED POROUS SILICON[J]. Solid State Communications,1995,96(5):317-320. |
APA | Li Y.,Zhou Y. D.,Li J. S.,Jiang H.,&Jin Y. X..(1995).LUMINESCENCE OF ER-IMPLANTED POROUS SILICON.Solid State Communications,96(5),317-320. |
MLA | Li Y.,et al."LUMINESCENCE OF ER-IMPLANTED POROUS SILICON".Solid State Communications 96.5(1995):317-320. |
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