GROWTH OF GAINASSB ALLOYS BY METALORGANIC CHEMICAL-VAPOR-DEPOSITION

	GROWTH OF GAINASSB ALLOYS BY METALORGANIC CHEMICAL-VAPOR-DEPOSITION
其他题名	论文其他题名
	Li S. W.; Jin Y. X.; Zhou T. M.; Zhang B. L.; Ning Y. Q.; Hong J.; Yuan G.; Zhang X. Y.; Yuan J. S.
	1995
发表期刊	Journal of Crystal Growth
ISSN	0022-0248
卷号	156 期号:1—2 页码:39-44
摘要	GaInAsSb alloys were grown by atmospheric pressure metalorganic chemical vapour deposition (MOCVD) on n-GaSb (Te-doped) substrates, oriented 2 degrees-3 degrees off (100) towards (110). The surface morphology of Sb-related III-V compounds depends on the growth parameters, the lattice mismatch and the quality and orientation of the surface of the substrate. The defect growth process is observed by scanning electron microscopy (SEM) and scanning electron acoustic microscopy (SEAM). The Ga and Sb concentrations in the solid were characterized as a function of the input ratio of Sb to group V, the AsH3 molar flow rate and growth temperature. On the other hand, the growth efficiency has been studied versus the AsH3 molar flow and growth temperature. The crystalline quality of the GaInAsSb epilayer has been characterized by the single-crystal X-ray diffraction pattern and double-crystal X-ray rocking curve diffraction.
收录类别	SCI
语种	英语
文献类型	期刊论文
条目标识符	http://ir.ciomp.ac.cn/handle/181722/25456
专题	中科院长春光机所知识产出
推荐引用方式 GB/T 7714	Li S. W.,Jin Y. X.,Zhou T. M.,et al. GROWTH OF GAINASSB ALLOYS BY METALORGANIC CHEMICAL-VAPOR-DEPOSITION[J]. Journal of Crystal Growth,1995,156(1—2):39-44.
APA	Li S. W..,Jin Y. X..,Zhou T. M..,Zhang B. L..,Ning Y. Q..,...&Yuan J. S..(1995).GROWTH OF GAINASSB ALLOYS BY METALORGANIC CHEMICAL-VAPOR-DEPOSITION.Journal of Crystal Growth,156(1—2),39-44.
MLA	Li S. W.,et al."GROWTH OF GAINASSB ALLOYS BY METALORGANIC CHEMICAL-VAPOR-DEPOSITION".Journal of Crystal Growth 156.1—2(1995):39-44.

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