Changchun Institute of Optics,Fine Mechanics and Physics,CAS
GAINASSB/GASB INFRARED PHOTODETECTORS PREPARED BY MOCVD | |
其他题名 | 论文其他题名 |
Zhang B.; Zhou T.; Jiang H.; Ning Y.; Jin Y. | |
1995 | |
发表期刊 | Electronics Letters
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ISSN | 0013-5194 |
卷号 | 31期号:10页码:830-832 |
摘要 | GaInAsSb/GaSb heterojunction photodetectors have been grown by metalorganic chemical vapour deposition (MOCVD). The room temperature performances of the photodetectors are described. The responsivity spectrum is peaked at 2.25 mu m and cut off at 1.7 mu m in the short wavelength and at 2.4 mu m in the long wavelength, respectively. The room temperature detectivity D* is 10(9)cm Hz(1/2) W-1 at 2.25 mu m. |
收录类别 | SCI |
语种 | 英语 |
WOS记录号 | WOS:A1995RA56500045 |
引用统计 | |
文献类型 | 期刊论文 |
条目标识符 | http://ir.ciomp.ac.cn/handle/181722/25455 |
专题 | 中科院长春光机所知识产出 |
推荐引用方式 GB/T 7714 | Zhang B.,Zhou T.,Jiang H.,et al. GAINASSB/GASB INFRARED PHOTODETECTORS PREPARED BY MOCVD[J]. Electronics Letters,1995,31(10):830-832. |
APA | Zhang B.,Zhou T.,Jiang H.,Ning Y.,&Jin Y..(1995).GAINASSB/GASB INFRARED PHOTODETECTORS PREPARED BY MOCVD.Electronics Letters,31(10),830-832. |
MLA | Zhang B.,et al."GAINASSB/GASB INFRARED PHOTODETECTORS PREPARED BY MOCVD".Electronics Letters 31.10(1995):830-832. |
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