GAINASSB/GASB INFRARED PHOTODETECTORS PREPARED BY MOCVD

	GAINASSB/GASB INFRARED PHOTODETECTORS PREPARED BY MOCVD
其他题名	论文其他题名
	Zhang B.; Zhou T.; Jiang H.; Ning Y.; Jin Y.
	1995
发表期刊	Electronics Letters
ISSN	0013-5194
卷号	31 期号:10 页码:830-832
摘要	GaInAsSb/GaSb heterojunction photodetectors have been grown by metalorganic chemical vapour deposition (MOCVD). The room temperature performances of the photodetectors are described. The responsivity spectrum is peaked at 2.25 mu m and cut off at 1.7 mu m in the short wavelength and at 2.4 mu m in the long wavelength, respectively. The room temperature detectivity D* is 10(9)cm Hz(1/2) W-1 at 2.25 mu m.
收录类别	SCI
语种	英语
WOS记录号	WOS:A1995RA56500045
引用统计
文献类型	期刊论文
条目标识符	http://ir.ciomp.ac.cn/handle/181722/25455
专题	中科院长春光机所知识产出
推荐引用方式 GB/T 7714	Zhang B.,Zhou T.,Jiang H.,et al. GAINASSB/GASB INFRARED PHOTODETECTORS PREPARED BY MOCVD[J]. Electronics Letters,1995,31(10):830-832.
APA	Zhang B.,Zhou T.,Jiang H.,Ning Y.,&Jin Y..(1995).GAINASSB/GASB INFRARED PHOTODETECTORS PREPARED BY MOCVD.Electronics Letters,31(10),830-832.
MLA	Zhang B.,et al."GAINASSB/GASB INFRARED PHOTODETECTORS PREPARED BY MOCVD".Electronics Letters 31.10(1995):830-832.