METALORGANIC CHEMICAL-VAPOR-DEPOSITION OF GAXIN1-XSB TERNARY ALLOYS

	METALORGANIC CHEMICAL-VAPOR-DEPOSITION OF GAXIN1-XSB TERNARY ALLOYS
其他题名	论文其他题名
	Zhang B. L.; Zhou T. M.; Jiang H.; Ning Y. Q.; Jin Y. X.; Hong C. R.; Yuan J. S.
	1995
发表期刊	Journal of Crystal Growth
ISSN	0022-0248
卷号	151 期号:1—2 页码:21-25
摘要	Metalorganic chemical vapor deposition (MOCVD) of ternary GaxIn1-xSb alloys on GaSb and GaAs substrates has been investigated at atmospheric pressure, using TMGa, TMIn and TMSb as source materials. The optimized growth parameters obtained by experiment were a growth temperature of 600 degrees C and a vapor III/V ratio of 0.4. It was found that the growth temperature was a key growth parameter for surface morphology and crystalline quality of the GaxIn1-xSb epilayer. The influence of the growth temperature on the Ga solid composition was previously explained. The Ga solid composition was proportional to the Ga vapor composition and vapor III/V ratio, respectively. The Ga distribution coefficient was found to be 1.06 under the optimized growth parameters and decreased with decreasing growth temperature. The results of the Hall measurement for GaxIn1-xSb alloys were presented with p-type background of the epilayers.
收录类别	SCI
语种	英语
WOS记录号	WOS:A1995RD98700004
引用统计	被引频次：9[WOS] [WOS记录] [WOS相关记录]
文献类型	期刊论文
条目标识符	http://ir.ciomp.ac.cn/handle/181722/25451
专题	中科院长春光机所知识产出
推荐引用方式 GB/T 7714	Zhang B. L.,Zhou T. M.,Jiang H.,et al. METALORGANIC CHEMICAL-VAPOR-DEPOSITION OF GAXIN1-XSB TERNARY ALLOYS[J]. Journal of Crystal Growth,1995,151(1—2):21-25.
APA	Zhang B. L..,Zhou T. M..,Jiang H..,Ning Y. Q..,Jin Y. X..,...&Yuan J. S..(1995).METALORGANIC CHEMICAL-VAPOR-DEPOSITION OF GAXIN1-XSB TERNARY ALLOYS.Journal of Crystal Growth,151(1—2),21-25.
MLA	Zhang B. L.,et al."METALORGANIC CHEMICAL-VAPOR-DEPOSITION OF GAXIN1-XSB TERNARY ALLOYS".Journal of Crystal Growth 151.1—2(1995):21-25.

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