Studies on deep levels in GaAs epilayers grown on Si by metal-organic chemical vapour deposition .4. 0.96 eV photoluminescence emission

	Studies on deep levels in GaAs epilayers grown on Si by metal-organic chemical vapour deposition .4. 0.96 eV photoluminescence emission
其他题名	论文其他题名
	Liang J. C.; Zhao J. L.; Gao Y.; Dou K.; Huang S. H.; Yu J. Q.; Gao H. K.
	1996
发表期刊	Journal of Materials Science Letters
ISSN	0261-8028
卷号	15 期号:3 页码:189-191
收录类别	SCI
语种	英语
文献类型	期刊论文
条目标识符	http://ir.ciomp.ac.cn/handle/181722/25436
专题	中科院长春光机所知识产出
推荐引用方式 GB/T 7714	Liang J. C.,Zhao J. L.,Gao Y.,et al. Studies on deep levels in GaAs epilayers grown on Si by metal-organic chemical vapour deposition .4. 0.96 eV photoluminescence emission[J]. Journal of Materials Science Letters,1996,15(3):189-191.
APA	Liang J. C..,Zhao J. L..,Gao Y..,Dou K..,Huang S. H..,...&Gao H. K..(1996).Studies on deep levels in GaAs epilayers grown on Si by metal-organic chemical vapour deposition .4. 0.96 eV photoluminescence emission.Journal of Materials Science Letters,15(3),189-191.
MLA	Liang J. C.,et al."Studies on deep levels in GaAs epilayers grown on Si by metal-organic chemical vapour deposition .4. 0.96 eV photoluminescence emission".Journal of Materials Science Letters 15.3(1996):189-191.