Preparation and photoluminescence study of high purity CdTe single crystals

	Preparation and photoluminescence study of high purity CdTe single crystals
其他题名	论文其他题名
	Yang B.; Ishikawa Y.; Miki T.; Doumae Y.; Tomizono T.; Isshiki M.
	1996
发表期刊	Journal of Crystal Growth
ISSN	0022-0248
卷号	159 期号:1—4 页码:171-174
摘要	CdTe single crystals were grown by vertical Bridgman (VB) and physical vapor transport (PVT) methods. The photoluminescence was measured at 4.2 K to evaluate the crystals and to examine the behavior of residual impurities and the effect of Cd purity. The segregation of dominant residual impurities was confirmed in VB as-grown crystals. The purification effect of PVT was also confirmed. The dominant emission line (A(0),X) at 1.5896 eV in the PL spectrum, related to Cu-Cd or V-Cd, has been found to have a doubler structure shared by two origins, though a complete understanding is still lacking.
收录类别	SCI
语种	英语
WOS记录号	WOS:A1996UH32400038
引用统计
文献类型	期刊论文
条目标识符	http://ir.ciomp.ac.cn/handle/181722/25428
专题	中科院长春光机所知识产出
推荐引用方式 GB/T 7714	Yang B.,Ishikawa Y.,Miki T.,et al. Preparation and photoluminescence study of high purity CdTe single crystals[J]. Journal of Crystal Growth,1996,159(1—4):171-174.
APA	Yang B.,Ishikawa Y.,Miki T.,Doumae Y.,Tomizono T.,&Isshiki M..(1996).Preparation and photoluminescence study of high purity CdTe single crystals.Journal of Crystal Growth,159(1—4),171-174.
MLA	Yang B.,et al."Preparation and photoluminescence study of high purity CdTe single crystals".Journal of Crystal Growth 159.1—4(1996):171-174.

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