Scanning electron acoustic microscopy of semiconductor materials

	Scanning electron acoustic microscopy of semiconductor materials
其他题名	论文其他题名
	Li S. W.; Jiang F. M.; Yin Q. R.; Jin Y. X.
	1996
发表期刊	Solid State Communications
ISSN	0038-1098
卷号	99 期号:11 页码:853-857
摘要	The capability of scanning electron acoustic microscopy in semiconductor materials has been studied. The signal generation mechanisms and applications of scanning electron acoustic microscopy in n-GaSb (Te-doped) crystals, and GaInAsSb on GaSb, GaSb on GaAs and InSb epilayer on a GaAs substrate are investigated, which shows the new technique for image and characterization of thermal elastic and pyroelectric property variations on a microscale resolution. Copyright (C) 1996 Elsevier Science Ltd
收录类别	SCI
语种	英语
文献类型	期刊论文
条目标识符	http://ir.ciomp.ac.cn/handle/181722/25422
专题	中科院长春光机所知识产出
推荐引用方式 GB/T 7714	Li S. W.,Jiang F. M.,Yin Q. R.,et al. Scanning electron acoustic microscopy of semiconductor materials[J]. Solid State Communications,1996,99(11):853-857.
APA	Li S. W.,Jiang F. M.,Yin Q. R.,&Jin Y. X..(1996).Scanning electron acoustic microscopy of semiconductor materials.Solid State Communications,99(11),853-857.
MLA	Li S. W.,et al."Scanning electron acoustic microscopy of semiconductor materials".Solid State Communications 99.11(1996):853-857.