Electroluminescence from ITO/SiO2/Ta2O5/Al multiple-layer structure excited by hot electrons

	Electroluminescence from ITO/SiO2/Ta2O5/Al multiple-layer structure excited by hot electrons
其他题名	论文其他题名
	Sun J. M.; Zhong G. Z.; Fan X. W.; Fu G. Z.; Zheng C. W.
	1997
发表期刊	Journal of Non-Crystalline Solids
ISSN	0022-3093
卷号	212 期号:2—3 页码:192-197
摘要	Electroluminescence from indium-tin-oxide (ITO) (200 nm)/SiO2 (70 nm)/Ta2O5 (240 nm)/Al multiple-layer structure is reported for electric field greater than or equal to 7 MV/cm in the SiO2 layer under alternating current voltage excitation. The SiO2 and Ta2O5 layers are Prepared by rf magnetron controlled reactive sputtering. The EL spectrum consists of two bands, a violet-blue band at about 380 nm from the ITO layer when the electrons are injected from the SiO2 layer to the ITO electrode and a red band at 650 nm from the SiO2 layer. The intensity of the bands depends on the electric fields in the SiO2 layer, This field dependence indicates changes in the energy distribution of hot electrons at the ITO-SiO2 interface and inside the SiO2 layer.
收录类别	SCI
语种	英语
WOS记录号	WOS:A1997XC98000011
引用统计
文献类型	期刊论文
条目标识符	http://ir.ciomp.ac.cn/handle/181722/25405
专题	中科院长春光机所知识产出
推荐引用方式 GB/T 7714	Sun J. M.,Zhong G. Z.,Fan X. W.,et al. Electroluminescence from ITO/SiO2/Ta2O5/Al multiple-layer structure excited by hot electrons[J]. Journal of Non-Crystalline Solids,1997,212(2—3):192-197.
APA	Sun J. M.,Zhong G. Z.,Fan X. W.,Fu G. Z.,&Zheng C. W..(1997).Electroluminescence from ITO/SiO2/Ta2O5/Al multiple-layer structure excited by hot electrons.Journal of Non-Crystalline Solids,212(2—3),192-197.
MLA	Sun J. M.,et al."Electroluminescence from ITO/SiO2/Ta2O5/Al multiple-layer structure excited by hot electrons".Journal of Non-Crystalline Solids 212.2—3(1997):192-197.

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