Growth and characterization of high purity CdTe single crystals

	Growth and characterization of high purity CdTe single crystals
其他题名	论文其他题名
	Yang B.; Ishikawa Y.; Doumae Y.; Miki T.; Ohyama T.; Isshiki M.
	1997
发表期刊	Journal of Crystal Growth
ISSN	0022-0248
卷号	172 期号:3—4 页码:370-375
摘要	High purity CdTe single crystals have been grown by improved physical vapor transport (PVT), following the purification by normal freezing using 6N Te and highly purified Cd as starting materials, As-grown single crystals were characterized with photoluminescence and photo-excited cyclotron resonance (CR) at 4.2 K and infrared transmission at room temperature. The improved PVT growth ampoule was confirmed very effective for controlling the growth rate and the reproducibility of a successful growth. Electron cyclotron mobility at 4.2 K is as high as 2.5 x 10(5) cm(2)/V . s and the neutral donor concentration (N-D) obtained from the linewidth of CR is 5 x 10(14) cm(-3).
收录类别	SCI
语种	英语
文献类型	期刊论文
条目标识符	http://ir.ciomp.ac.cn/handle/181722/25402
专题	中科院长春光机所知识产出
推荐引用方式 GB/T 7714	Yang B.,Ishikawa Y.,Doumae Y.,et al. Growth and characterization of high purity CdTe single crystals[J]. Journal of Crystal Growth,1997,172(3—4):370-375.
APA	Yang B.,Ishikawa Y.,Doumae Y.,Miki T.,Ohyama T.,&Isshiki M..(1997).Growth and characterization of high purity CdTe single crystals.Journal of Crystal Growth,172(3—4),370-375.
MLA	Yang B.,et al."Growth and characterization of high purity CdTe single crystals".Journal of Crystal Growth 172.3—4(1997):370-375.

条目包含的文件		下载所有文件
文件名称/大小	文献类型	版本类型	开放类型	使用许可
Yang-1997-Growth and（378KB）			开放获取	--	浏览下载