The near-infrared photoluminescence of GaAs epilayers grown on Si

	The near-infrared photoluminescence of GaAs epilayers grown on Si
其他题名	论文其他题名
	Liang J. C.; Li P. L.; Gao Y.; Zhao J. L.
	1997
发表期刊	Journal of Materials Science
ISSN	0022-2461
卷号	32 期号:16 页码:4377-4382
摘要	In heteroepitaxial GaAs grown on Si (GaAs/Si) there exist deep levels caused by various charged states of defects because of large lattice misfit and thermal expansion mismatch between GaAs and Si. The temperature-and excitation intensity-dependent near-infrared photoluminescence spectra related to the deep levels present in GaAs/Si grown by metal-organic chemical vapour deposition with different ratios of [As]/[Ga] were studied. In terms of configuration coordinate model, the Franck-Condon shifts of near-infrared emission in GaAs/Si were obtained by measuring the variation in full width at half-maximum with temperature. The band-gap shifts with temperature and with mismatch strain in GaAs/Si were considered. Taking Franck-Condon and band-gap shifts into account, the energy relations for the transitions from donor to acceptor, from conduction band to acceptor and from donor to valence band were revised. According to these transition-energy relations and the emission characteristics of GaAs/Si epilayers, three emissions were interpreted as the recombination luminescence of donor-acceptor pairs and two emissions were caused by As interstitial-Ga vacancy complex centres.
收录类别	SCI
语种	英语
WOS记录号	WOS:A1997XT18400025
引用统计
文献类型	期刊论文
条目标识符	http://ir.ciomp.ac.cn/handle/181722/25400
专题	中科院长春光机所知识产出
推荐引用方式 GB/T 7714	Liang J. C.,Li P. L.,Gao Y.,et al. The near-infrared photoluminescence of GaAs epilayers grown on Si[J]. Journal of Materials Science,1997,32(16):4377-4382.
APA	Liang J. C.,Li P. L.,Gao Y.,&Zhao J. L..(1997).The near-infrared photoluminescence of GaAs epilayers grown on Si.Journal of Materials Science,32(16),4377-4382.
MLA	Liang J. C.,et al."The near-infrared photoluminescence of GaAs epilayers grown on Si".Journal of Materials Science 32.16(1997):4377-4382.

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