Two kinds of crystalline state of InSb epilayers on GaAs substrates by metalorganic chemical vapor deposition

	Two kinds of crystalline state of InSb epilayers on GaAs substrates by metalorganic chemical vapor deposition
其他题名	论文其他题名
	Li S. W.; Ning Y. Q.; Zhou T. M.; Jin Y. X.; Tian Y.
	1997
发表期刊	Thin Solid Films
ISSN	0040-6090
卷号	298 期号:1—2 页码:245-248
摘要	InSb epilayers were grown on GaAs substrates by atmospheric pressure metalorganic chemical vapor deposition (MOCVD). The surface and subsurface morphologies of InSb epilayers were observed by scanning electron microscopy (SEM) and scanning electron acoustic microscopy (SEAM), and the crystalline properties were characterized by the single-crystal X-ray diffraction pattern and double-crystal Xray rocking curve. Two types of crystalline state after the release of the large compression stress, one was homogeneous dislocation array and the other was heterogeneous plastic flow, were observed and discussed. (C) 1997 Elsevier Science S.A.
收录类别	SCI
语种	英语
文献类型	期刊论文
条目标识符	http://ir.ciomp.ac.cn/handle/181722/25394
专题	中科院长春光机所知识产出
推荐引用方式 GB/T 7714	Li S. W.,Ning Y. Q.,Zhou T. M.,et al. Two kinds of crystalline state of InSb epilayers on GaAs substrates by metalorganic chemical vapor deposition[J]. Thin Solid Films,1997,298(1—2):245-248.
APA	Li S. W.,Ning Y. Q.,Zhou T. M.,Jin Y. X.,&Tian Y..(1997).Two kinds of crystalline state of InSb epilayers on GaAs substrates by metalorganic chemical vapor deposition.Thin Solid Films,298(1—2),245-248.
MLA	Li S. W.,et al."Two kinds of crystalline state of InSb epilayers on GaAs substrates by metalorganic chemical vapor deposition".Thin Solid Films 298.1—2(1997):245-248.

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