Changchun Institute of Optics,Fine Mechanics and Physics,CAS
Two kinds of crystalline state of InSb epilayers on GaAs substrates by metalorganic chemical vapor deposition | |
其他题名 | 论文其他题名 |
Li S. W.; Ning Y. Q.; Zhou T. M.; Jin Y. X.; Tian Y. | |
1997 | |
发表期刊 | Thin Solid Films
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ISSN | 0040-6090 |
卷号 | 298期号:1—2页码:245-248 |
摘要 | InSb epilayers were grown on GaAs substrates by atmospheric pressure metalorganic chemical vapor deposition (MOCVD). The surface and subsurface morphologies of InSb epilayers were observed by scanning electron microscopy (SEM) and scanning electron acoustic microscopy (SEAM), and the crystalline properties were characterized by the single-crystal X-ray diffraction pattern and double-crystal Xray rocking curve. Two types of crystalline state after the release of the large compression stress, one was homogeneous dislocation array and the other was heterogeneous plastic flow, were observed and discussed. (C) 1997 Elsevier Science S.A. |
收录类别 | SCI |
语种 | 英语 |
文献类型 | 期刊论文 |
条目标识符 | http://ir.ciomp.ac.cn/handle/181722/25394 |
专题 | 中科院长春光机所知识产出 |
推荐引用方式 GB/T 7714 | Li S. W.,Ning Y. Q.,Zhou T. M.,et al. Two kinds of crystalline state of InSb epilayers on GaAs substrates by metalorganic chemical vapor deposition[J]. Thin Solid Films,1997,298(1—2):245-248. |
APA | Li S. W.,Ning Y. Q.,Zhou T. M.,Jin Y. X.,&Tian Y..(1997).Two kinds of crystalline state of InSb epilayers on GaAs substrates by metalorganic chemical vapor deposition.Thin Solid Films,298(1—2),245-248. |
MLA | Li S. W.,et al."Two kinds of crystalline state of InSb epilayers on GaAs substrates by metalorganic chemical vapor deposition".Thin Solid Films 298.1—2(1997):245-248. |
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