Isotropic growth islands of Ga0.16In0.84As0.80Sb0.20 epilayer grown by metalorganic chemical vapour deposition

	Isotropic growth islands of Ga0.16In0.84As0.80Sb0.20 epilayer grown by metalorganic chemical vapour deposition
其他题名	论文其他题名
	Li S. W.; Jin Y. X.; Gao C. X.; Jin Z. S.
	1997
发表期刊	Journal of Crystal Growth
ISSN	0022-0248
卷号	173 期号:3—4 页码:321-324
摘要	The quaternary Ga0.16In0.84As0.80Sb0.20 epilayer was grown on GaSb substrate by metalorganic chemical vapour deposition (MOCVD). On the epitaxial surface smooth and perfect three-dimensional islands were observed by atomic force microscopy (AFM). A good crystalline quality was characterized by single-crystal X-ray diffraction pattern and double-crystal X-ray rocking curve. When the growth rate of the growth nucleus is larger than the growth rate of the high-index facet, the mode of island growth is isotropic.
收录类别	SCI
语种	英语
文献类型	期刊论文
条目标识符	http://ir.ciomp.ac.cn/handle/181722/25382
专题	中科院长春光机所知识产出
推荐引用方式 GB/T 7714	Li S. W.,Jin Y. X.,Gao C. X.,et al. Isotropic growth islands of Ga0.16In0.84As0.80Sb0.20 epilayer grown by metalorganic chemical vapour deposition[J]. Journal of Crystal Growth,1997,173(3—4):321-324.
APA	Li S. W.,Jin Y. X.,Gao C. X.,&Jin Z. S..(1997).Isotropic growth islands of Ga0.16In0.84As0.80Sb0.20 epilayer grown by metalorganic chemical vapour deposition.Journal of Crystal Growth,173(3—4),321-324.
MLA	Li S. W.,et al."Isotropic growth islands of Ga0.16In0.84As0.80Sb0.20 epilayer grown by metalorganic chemical vapour deposition".Journal of Crystal Growth 173.3—4(1997):321-324.

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