Analysis of the R(0)A product and detectivity in a GaInAsSb infrared photovoltaic detector

	Analysis of the R(0)A product and detectivity in a GaInAsSb infrared photovoltaic detector
其他题名	论文其他题名
	Tian Y. A.; Zhou T. M.; Zhang B. L.; Jin Y. X.; Jiang H.
	1998
发表期刊	Journal of Physics D-Applied Physics
ISSN	0022-3727
卷号	31 期号:22 页码:3291-3297
摘要	In this paper a theoretical analysis of the R(o)A product and the detectivity in a GalnAsSb infrared photovoltaic detector is reported, dependent on the four fundamental kinds of noise mechanism and the quantum efficiency. The considerations are carried out for near room temperature and 2.5 mu m wavelength. The analytical results show that the noise mechanisms can be reduced, and correspondingly the performance of such detectors can be improved.
收录类别	SCI
语种	英语
文献类型	期刊论文
条目标识符	http://ir.ciomp.ac.cn/handle/181722/25359
专题	中科院长春光机所知识产出
推荐引用方式 GB/T 7714	Tian Y. A.,Zhou T. M.,Zhang B. L.,et al. Analysis of the R(0)A product and detectivity in a GaInAsSb infrared photovoltaic detector[J]. Journal of Physics D-Applied Physics,1998,31(22):3291-3297.
APA	Tian Y. A.,Zhou T. M.,Zhang B. L.,Jin Y. X.,&Jiang H..(1998).Analysis of the R(0)A product and detectivity in a GaInAsSb infrared photovoltaic detector.Journal of Physics D-Applied Physics,31(22),3291-3297.
MLA	Tian Y. A.,et al."Analysis of the R(0)A product and detectivity in a GaInAsSb infrared photovoltaic detector".Journal of Physics D-Applied Physics 31.22(1998):3291-3297.

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