Micro-Raman and photoluminescence investigation of ZnxCd1-xSe thin film under high pressure

	Micro-Raman and photoluminescence investigation of ZnxCd1-xSe thin film under high pressure
其他题名	论文其他题名
	Li W. S.; Shen Z. X.; Shen D. Z.; Fan X. W.
	1998
发表期刊	Journal of Applied Physics
ISSN	0021-8979
卷号	84 期号:9 页码:5198-5201
摘要	Micro-Raman and photoluminescence (PL) studies of a ZnxCd1-xSe (x=0.68) thin film sample have been carried out under high pressure at room temperature. In the PL spectra, the PL energy gap shift exhibits sublinearity with pressure and a least-square fitting to the experimental data gives pressure coefficients of alpha = 0.082 eV/GPa and beta = -0.0052 eV/GPa(2). The second-order pressure coefficient beta of the energy gap obtained experimentally is anomalously large and its origin was explained by alloy potential fluctuation with increasing pressure. From the Raman spectra, the first-order pressure coefficient was also calculated using least-square fitting. The low energy tail of the longitudinal-optical phonon was found to develop with pressure and the line shape change with pressure is interpreted in terms of a ''spatial correlation" model. (C) 1998 American Institute of Physics. [S0021-8979(98)05021-X].
收录类别	SCI
语种	英语
文献类型	期刊论文
条目标识符	http://ir.ciomp.ac.cn/handle/181722/25356
专题	中科院长春光机所知识产出
推荐引用方式 GB/T 7714	Li W. S.,Shen Z. X.,Shen D. Z.,et al. Micro-Raman and photoluminescence investigation of ZnxCd1-xSe thin film under high pressure[J]. Journal of Applied Physics,1998,84(9):5198-5201.
APA	Li W. S.,Shen Z. X.,Shen D. Z.,&Fan X. W..(1998).Micro-Raman and photoluminescence investigation of ZnxCd1-xSe thin film under high pressure.Journal of Applied Physics,84(9),5198-5201.
MLA	Li W. S.,et al."Micro-Raman and photoluminescence investigation of ZnxCd1-xSe thin film under high pressure".Journal of Applied Physics 84.9(1998):5198-5201.

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