Growth and characterization of InAs-rich GaInAsSb alloys on GaSb substrates by MOCVD

	Growth and characterization of InAs-rich GaInAsSb alloys on GaSb substrates by MOCVD
其他题名	论文其他题名
	Ning Y. Q.; Zhou T. M.; Zhang B. L.; Jiang H.; Li S. W.; Yuan G.; Tian Y.; Jin Y. X.
	1998
发表期刊	Journal of Crystal Growth
ISSN	0022-0248
卷号	191 期号:1—2 页码:39-43
摘要	MOCVD growth and characterization of InAs-rich GaInAsSb on GaSb substrates was investigated. High quality mirror-like surfaces with a minimum lattice mismatch of 0.4% was obtained. The surface of InAs-rich GaInAsSb epilayer shows morphological features much different from that of GaSb-rich films. Solid compositions of InAs-rich films were dependent on growth temperature. InAs-rich GaInAsSb shows n-type conduction, which is the opposite of GaSb-rich samples. A room temperature electron mobility of 5000 cm(2)/V.s with electron concentration of 3.6 x 10(17) cm(-3) was obtained. (C) 1998 Elsevier Science B.V. All rights reserved.
收录类别	SCI
语种	英语
文献类型	期刊论文
条目标识符	http://ir.ciomp.ac.cn/handle/181722/25354
专题	中科院长春光机所知识产出
推荐引用方式 GB/T 7714	Ning Y. Q.,Zhou T. M.,Zhang B. L.,et al. Growth and characterization of InAs-rich GaInAsSb alloys on GaSb substrates by MOCVD[J]. Journal of Crystal Growth,1998,191(1—2):39-43.
APA	Ning Y. Q..,Zhou T. M..,Zhang B. L..,Jiang H..,Li S. W..,...&Jin Y. X..(1998).Growth and characterization of InAs-rich GaInAsSb alloys on GaSb substrates by MOCVD.Journal of Crystal Growth,191(1—2),39-43.
MLA	Ning Y. Q.,et al."Growth and characterization of InAs-rich GaInAsSb alloys on GaSb substrates by MOCVD".Journal of Crystal Growth 191.1—2(1998):39-43.

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