Liquid-phase epitaxial growth of InAsPSb/InAs heterostructure

	Liquid-phase epitaxial growth of InAsPSb/InAs heterostructure
其他题名	论文其他题名
	Wang Y. Z.; Jin C. C.; Lu G. J.
	1998
发表期刊	Journal of Crystal Growth
ISSN	0022-0248
卷号	187 期号:2 页码:194-196
摘要	Quaternary InAsPSb epitaxial layers have been directly grown on InAs substrate without buffer layer using both the supercooling and step-cooling liquid-phase epitaxy (LPE) techniques. Some properties of InAsPSb/InAs layers were investigated. The quaternary layer is lattice matched to InAs by about 1.6 x 10(-3). X-ray diffraction spectra half-width maximum of the quaternary epilayer is about 200 s. I-V characteristics of the p-n junction formed between p-InAsPSb and n-InAs substrate was measured at 300 and 77 Fl. The laser emission with wavelength of 3.09 mu m was observed at 12 K from the p-n junction of the p-InAs0.82P0.12Sb0.06 epilayers and the n-InAs substrate. (C) 1998 Elsevier Science B.V. All rights reserved.
收录类别	SCI
语种	英语
文献类型	期刊论文
条目标识符	http://ir.ciomp.ac.cn/handle/181722/25348
专题	中科院长春光机所知识产出
推荐引用方式 GB/T 7714	Wang Y. Z.,Jin C. C.,Lu G. J.. Liquid-phase epitaxial growth of InAsPSb/InAs heterostructure[J]. Journal of Crystal Growth,1998,187(2):194-196.
APA	Wang Y. Z.,Jin C. C.,&Lu G. J..(1998).Liquid-phase epitaxial growth of InAsPSb/InAs heterostructure.Journal of Crystal Growth,187(2),194-196.
MLA	Wang Y. Z.,et al."Liquid-phase epitaxial growth of InAsPSb/InAs heterostructure".Journal of Crystal Growth 187.2(1998):194-196.

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