Atomic force microscopy on the Ga0.16In0.84As0.80Sb0.20 epilayer grown by metalorganic chemical vapor deposition

	Atomic force microscopy on the Ga0.16In0.84As0.80Sb0.20 epilayer grown by metalorganic chemical vapor deposition
其他题名	论文其他题名
	Gao C. X.; Li S. W.; Yang J.; Liu B. B.
	1998
发表期刊	Chinese Physics Letters
ISSN	0256-307X
卷号	15 期号:10 页码:724-726
摘要	The atomic force microscopy study was made on the quaternary Ga0.16In0.84As0.80Sb0.20 epilayer prepared on GaSb substrate by metalorganic chemical vapor deposition. The island-like defects were found on the substrate surface pretreated chemically. With the growth process going, these island-like defects could be buried by the epilayer. In the initial stage, two-dimensional-growth-mode was followed. When the epilayer thickness reached 70 nm, three-dimensional (3D)-growth-mode occurred and thc perfect 3D islands were observed.
收录类别	SCI
语种	英语
文献类型	期刊论文
条目标识符	http://ir.ciomp.ac.cn/handle/181722/25343
专题	中科院长春光机所知识产出
推荐引用方式 GB/T 7714	Gao C. X.,Li S. W.,Yang J.,et al. Atomic force microscopy on the Ga0.16In0.84As0.80Sb0.20 epilayer grown by metalorganic chemical vapor deposition[J]. Chinese Physics Letters,1998,15(10):724-726.
APA	Gao C. X.,Li S. W.,Yang J.,&Liu B. B..(1998).Atomic force microscopy on the Ga0.16In0.84As0.80Sb0.20 epilayer grown by metalorganic chemical vapor deposition.Chinese Physics Letters,15(10),724-726.
MLA	Gao C. X.,et al."Atomic force microscopy on the Ga0.16In0.84As0.80Sb0.20 epilayer grown by metalorganic chemical vapor deposition".Chinese Physics Letters 15.10(1998):724-726.

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