Carrier tunneling in a novel asymmetric quantum well structure

	Carrier tunneling in a novel asymmetric quantum well structure
其他题名	论文其他题名
	Yu G. Y.; Fan X. W.; Zhang J.; Shen D.
	1999
发表期刊	Solid State Communications
ISSN	0038-1098
卷号	112 期号:5 页码:291-294
摘要	Based on the carrier tunneling effect, a novel asymmetric quantum well is designed to improve the carrier injection for a type I quantum well. Two type II quantum wells were chosen to provide the electrons and holes for the type I quantum well via carrier resonant tunneling, respectively. Under the condition that both electrons and holes have fast tunneling rate, the carrier recombination in the type I quantum well can be enhanced. In order to optimize the structure, the small coupling barrier width, energy level resonance and small energy level width should be chosen simultaneously. (C) 1999 Elsevier Science Ltd. All rights reserved.
收录类别	SCI
语种	英语
文献类型	期刊论文
条目标识符	http://ir.ciomp.ac.cn/handle/181722/25324
专题	中科院长春光机所知识产出
推荐引用方式 GB/T 7714	Yu G. Y.,Fan X. W.,Zhang J.,et al. Carrier tunneling in a novel asymmetric quantum well structure[J]. Solid State Communications,1999,112(5):291-294.
APA	Yu G. Y.,Fan X. W.,Zhang J.,&Shen D..(1999).Carrier tunneling in a novel asymmetric quantum well structure.Solid State Communications,112(5),291-294.
MLA	Yu G. Y.,et al."Carrier tunneling in a novel asymmetric quantum well structure".Solid State Communications 112.5(1999):291-294.

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