Hetero- and homoepitaxial Nd3+-doped LaF3 thin films grown by molecular beam epitaxy: A spectroscopic study

	Hetero- and homoepitaxial Nd3+-doped LaF3 thin films grown by molecular beam epitaxy: A spectroscopic study
其他题名	论文其他题名
	Lahoz F.; Daran E.; Zhang X.; MunozYague A.; Cases R.; Alcala R.
	1999
发表期刊	Journal of Applied Physics
ISSN	0021-8979
卷号	86 期号:7 页码:3699-3704
摘要	Hetero- and homoepitaxial Nd3+-doped LaF3 thin films have been grown by molecular beam epitaxy. Two different orientations of CaF2 substrates, (111) and (110), have been used for the heteroepitaxial structures. High-resolution emission and excitation spectra as well as the decay time of the emission have been measured. The spectroscopic measurements demonstrate that one Nd3+ site is present in the LaF3 layers grown on CaF2(111) substrates but two slightly different Nd3+ centers are resolved in the films on CaF2(110) substrates. One Nd3+ site has been found in the homoepitaxial sample. Slight differences are observed between the centers found in the LaF3 layers and the one observed in the Nd3+-doped LaF3 bulk crystal. For the homoepitaxial layer, the linewidths are similar to those of the bulk crystals, whereas for the heteroepitaxial layers, a broadening is observed. (C) 1999 American Institute of Physics. [S0021-8979(99)00519-8].
收录类别	SCI
语种	英语
文献类型	期刊论文
条目标识符	http://ir.ciomp.ac.cn/handle/181722/25320
专题	中科院长春光机所知识产出
推荐引用方式 GB/T 7714	Lahoz F.,Daran E.,Zhang X.,et al. Hetero- and homoepitaxial Nd3+-doped LaF3 thin films grown by molecular beam epitaxy: A spectroscopic study[J]. Journal of Applied Physics,1999,86(7):3699-3704.
APA	Lahoz F.,Daran E.,Zhang X.,MunozYague A.,Cases R.,&Alcala R..(1999).Hetero- and homoepitaxial Nd3+-doped LaF3 thin films grown by molecular beam epitaxy: A spectroscopic study.Journal of Applied Physics,86(7),3699-3704.
MLA	Lahoz F.,et al."Hetero- and homoepitaxial Nd3+-doped LaF3 thin films grown by molecular beam epitaxy: A spectroscopic study".Journal of Applied Physics 86.7(1999):3699-3704.

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